Muon spin resonance and repolarization in amorphous silicon monoxide (a-SiO)

Studies of the muonium fractions in the amorphous oxide a-SiO have been carried out by RF resonance at TRIUMF, Canada and LF repolarization techniques at RAL, U.K. The resonance measurements confirm the presence of the interstitial Mu centre in this intermediate oxide of silicon. Analysis of the data gathered at RAL, using a recently-developed fitting technique, reveals that the Mu^* state is present here as well, but with lower relative fractions than in a-Si. However, as in the latter material, but in contrast to c-Si, this bond-centre species appears to be stable up to room temperature.     

Stability of muon-oxygen bond sites in RBa2Cu3O7

Relative energies of muon probe sites in the chain region of RBa₂Cu₃O₇ (RBCO) are investigated using a molecular quantum chemistry calculation for (Oμ)⁻ embedded in a cluster of point charges to simulate local charge distributions in RBCO. Partial Cu−O chain covalency results in a O-μ...O muon site between the chain and bridging oxygens. However, Cu-μ “hydride”-like sites are suggested by results for nominally ionic clusters.     

Longitudinal relaxation of muonium in Ge and GaAs

Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAsTe appear consistent with dissociation of aMu-Te pair.This work was supported by the US National Science Foundation (DMR-8917639 [TLE, BH]), the Science and Engineering Research Council of the UK (EAD, AS, SFJC), the Robert A. Welch Foundation (D-1053 [RLL], and C-1048 [TLE]), and a NATO Collaborative Research Grant (RLL, SFJC, RCD, CS). We wish to thank D.A. Vanderwater of Hewlett Packard for providing theGaAsTe sample.     

RF-μSR study of muonium charge states and dynamics in Si

The radio frequencySR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu^* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 10¹¹ to 10¹⁵ cm^–3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu^* and Mu to a bond centered ⁺ followed at high temperature by charge exchange involving Mu.     

Styrene emulsion polymerization: Particle-size distributions

Data are presented on the time evolution of particle-size distributions (PSDs) in seeded and ab initio styrene emulsion polymerization systems. Initiation was by chemical reagent (potassium persulfate) or γ-radiation. The unswollen PSDs at various times during interval II of the polymerization were obtained by direct measurement of calibrated electron micrographs. Experimental results were fitted with the equations that describe the time evolution of an initial PSD. Analytic solutions to these equations that allow for entry, exit, and propagation of free radicals were obtained. The values of the rate coefficients for these processes used to fit the experimental data were in excellent agreement with those obtained from dilatometric kinetics experiments.     

Die Struktur des Harpagosids. 2. Mitteilung über Iridoide

The structure and configuration of harpagoside, a bitter principle from the roots of Harpagophytum procumbens DC, have been elucidated by degradation reactions and NMR. spectra. The hitherto uncertain position of a secondary hydroxyl group could be assigned to C-6 of the aglycone moiety. As earlier postulated, harpagoside ( 1 ) as well as its saponification product, harpagide ( 12 ), belong to a series of natural enol ethers known as iridoids.     

Influence of impurities on short range electron transport in GaAs

The influence of Cr impurities on muonium atom formation in GaAs has been studied using muon spin relaxation techniques with alternating electric fields. The results suggest that electron transport to and capture by the muon is suppressed by capture/scattering on intervening Cr centers. The length scale involved is estimated to be about 3x10(-6) cm. This offers an opportunity to study electron transport to positive centers in semiconductors on a microscopic scale.     

Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs

We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.