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Abstract— Following UV irradiation at 254 nm and treatment with hot piperidine, single-stranded 49-mer and 12-mer oligodeoxyribonucleotides have been shown by gel-sequencing experiments to contain a prominent alkali-labile cleavage site that maps to adenine in the sequence element 5'-TTGATC-3'. This behavior is abolished by single base substitutions within the photoreactive tract and does not occur with duplex DNA. The distinctive properties of the photolesion are consistent with the formation of an abasic site through initial loss of a photomodified adenine base of unknown structure. The presence of an abasic site is supported by the observations that the alkaline cleavage fragments are terminally phosphorylated and that strand scission can also be effected by spermidine and the tripeptide Lys-Trp-Lys.  相似文献   
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This article describes mild methods to directly assemble, functionalize, and pattern monolayers of undecylenic acid on hydrogen-terminated Si(111). These monolayers were assembled under very mild conditions from a neat solution of undecylenic acid containing 0.1 mol % 4-(decanoate)-2,2,6,6-tetramethylpiperidinooxy at room temperature without the need for UV light. Because of these mild conditions, monolayers exposing carboxylic acids could be assembled in one step without the need to protect the acid prior to its assembly. The monolayers were extensively characterized by horizontal attenuated total reflection infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), and contact angle goniometry. The monolayers bonded to the silicon surface preferentially through the olefin with no detectable bonds between the carboxylic acids and silicon. The crystallinity of the monolayer was studied by infrared spectroscopy through the antisymmetric--v(a)(CH(2))--and symmetric--v(s)(CH(2))--stretches for methylene. Because it is important for future applications to assemble functional surfaces, methods to react the acid-terminated monolayers with trifluoroacetic anhydride and triethylamine to yield a symmetric anhydride on the monolayer were studied. These anhydrides were reacted with a variety of milligram-quantity amines to yield amide-terminated surfaces. This method was general, and a variety of amines could be bonded to the monolayer. The stabilities of these monolayers upon exposure to ambient conditions and under a variety of solvents were described. Because patterned monolayers have found wide applications, we have developed methods to pattern 1-octadecylamine and poly(ethylenimine) on the micrometer scale using soft lithography. In addition, polymer brushes of polynorbornene with thicknesses from 32 to 150 nm were grown from monolayers patterned with the Grubbs' catalyst. The patterned surfaces were imaged by scanning electron microscopy, scanning probe microscopy, and ellipsometry to determine the thicknesses of the patterns and the fidelity of the method.  相似文献   
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The electron spin resonance spectrum of gamma-irradiated octadecyl methacrylate (m.p. ≈ 12°C.) was due to a mixture of three radicals formed by (1) loss of a hydrogen atom from the paraffin chain, (2) addition of a hydrogen atom to the double bond, and (3) addition of a monomer molecule to radicals formed by (1) or (2). On warming monomer added to radicals (1) and (2) between ?170 and ?50°C., and above ?50°C. the spectrum was solely due to propagating methacrylate radicals. The total radical concentration decreased slightly at ?150°C. and was then constant up to ?30°C. A marked decrease in radical concentration occurred from ?30 to +12°C., it took place rapidly and reached an equilibrium value after each successive increase in temperature. Differential thermal analysis indicated a solid—solid phase change at ?30°C. When the sample was kept at 0°C. there was no further decrease in radical concentration even with 50% conversion to polymer. With 2% added chloranil the (chloranil)? was observed to be of about the same concentration as methacrylate radicals. The initial total radical concentration was lower and decreased to zero by 0°C. on warming. No polymer was obtained.  相似文献   
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A new class of half-integer rank spherical tensors is introduced. The motivation for investigating this new class of tensors originated from a desire to be able to partition matrices using mixtures of fictitious integer and half-integer spin labels. However, it is shown that they can also be used as annihilation/creation operators for spin-1/2, 3/2, etc., particles. In particular, half-integer rank tensors can be used to add/subtract a spin-1/2 particle from a given ensemble. Thus they can be viewed as the natural generalization of the raising and lowering operatorsI ±, in that they change bothI andM, simultaneously.The concept of a universal rotator is introduced and it is demonstrated that half-integer rank tensors obey the same contractional and rotational properties as their integer counterparts, but with half-integer rank. In addition, it is shown that half-integer rank tensors can be used to factorize the Pauli spin matrices. Finally, an example of the use of half-integer rank tensors in the block-diagonalization of a simple 3 x 3 matrix is presented and discussed.  相似文献   
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