稀土-铁石榴石的共价极化行为对光谱和穆斯堡尔谱的影响

利用平均能带模型研究了稀土－铁石榴石晶体化学键的性质，结果表明，这些晶体虽然包含的稀土离子不同，但计算得到的化学键参数几乎相同。在每个化合物当中，金属离子与氧配体之间共价性随着Ｌｎ＾３＋（２４ｃ）、Ｆｅ＾３＋（１６ａ）、Ｆｅ＾３＋（１６ｄ）的次序而增大。利用由共价性的极化率定义的化学环境因子ｈ计算ＹＩＧ中Ｆｅ＾３＋的拉卡参数与实验值一致。建立了穆斯堡尔同质异能位移与ｈ~值的线性关系，讨论了居里温度     

Synthesis and Optical Properties of InP Semiconductor Nanocombs

One-dimensional Ⅲ- Ⅴ semiconductor nanostruc- tures show fascinating applications in various fields. These materials have high electron mobil- ity, superior optical properties, and great flexibility in heterostructure design. When applied in ad- vanced nanodevices, the performance is highly de- pendent on the morphology and crystal structure of the nanostructures. Therefore, the full understand- ing and control of crystal structures and morpholo- gies are of importance to develop such applications. As a typical Ⅲ-Ⅴ semiconductor, InP is an especially attractive target for nanowires research due to its extensive uses in various fields. InP nanostructures with different morphologies, such as quantum dots, nanospheres, nanowires, and nanotubes, have been successfully synthesized. However, the facile syn- thesis of InP semiconductor with comb-like morpholo- gies have rarely been reported.     

~(57)Fe,~(119)Sn掺杂Bi_2Sr_2Ca_(n-1)Cu_nO_(2n+4)的化学键性质和Mssbauer谱位移研究

利用电介质的平均能带模型计算了Bi2 Sr2 Can- 1CunO2n +4 (n =1,2 ,3)的化学键参数 .应用由共价性和极化率定义的化学环境因子计算了57Fe和119Sn在Bi2 Sr2 Can - 1CunO2n +4 中的M ssbauer同质异能位移 ,确定了57Fe和119Sn在Bi2 Sr2 Can- 1CunO2n +4 中的价态和占位情况 .     

复杂晶体点阵能的计算方法

我们在考虑了晶体中近邻正.负离子的共价行为的基础上,提出了晶体点阵能的计算公式.并引进了离子有效价态的概念和共价能计算的经验表达式,把二元离子晶体点阵能的计算推广到一般极性共价晶体和其他复杂晶体. 计算结果与实验结果符合得很好.     

EuBa2Cu3O7的化学键性质和穆斯堡尔谱研究

利用电介质的平均能带模型计算了ＥｕＢａ２Ｃｕ３Ｏ７的化学键参数,得到Ｃｕ（１）－Ｏ键的平均共价性为０．４１４,Ｃｕ（２）－Ｏ键的平均共价性为０．２８１,应用由共价性和极化率定义的化学环境因子计算了＾５７Ｆｅ、＾１１９Ｓｎ在ＥｕＢａ２Ｃｕ３Ｏ７中的穆斯堡尔同质异能位移,确定了＾５７Ｆｅ、＾１１９Ｓｎ的价态和占位情况。     

复杂晶体硬度的理论和计算

现有材料的硬度可用硬度计来测量.从理论上严格计算硬度值是一件困难的事情.但随着超硬材料理论设计的蓬勃发展,硬度的预测成为一个瓶颈问题.本文系统介绍了利用复杂晶体化学键理论计算晶体硬度的基本理论,以及关于纳米晶硬度的计算方法.利用第一性原理几何优化方法建立了新近合成的具有氧缺陷的四方BC2N相的晶体结构.利用硬度理论预测了它的硬度.结果表明该物质是一个超硬半导体材料.     

共价和极化对119Sn、129I穆斯堡尔谱位移的影响

利用化学键的介电理论研究了119Sn、 129I穆斯堡尔谱同质异能位移,发现由共价性fcμ和极化率αLμ定义的化学环境因子h与穆斯堡尔谱同质异能位移δ存在线性关系：δ=δ0+bh, h=(μαLμfcμ）1/2。     

An Orthorhombic Phase of Superhard o-BC_4N

A potential superhard o-BC_4 N with Imm2 space group is identified by ab initio evolutionary methodology using CALYPSO code. The structural, electronic and mechanical properties of o-BC_4N are investigated. The elastic calculations indicate that o-BC_4N is mechanically stable. The phonon dispersions imply that this phase is dynamically stable under ambient conditions. The structure of o-BC_4N is more energetically favorable than o-BC_4N above the pressure of 25.1 GPa. Here o-BC_4N is a semiconductor with an indirect band gap of about 3.95 eV, and the structure is highly incompressible with a bulk modulus of 396.3 GPa and shear modulus of 456.0 GPa. The mechanical failure mode of o-BC_4N is dominated by the shear type. The calculated peak stress of 58.5 GPa in the(100)[001] shear direction sets an upper bound for its ideal strength. The Vickers hardness of o-BC_4N reaches 78.7 GPa, which is greater than that of t-BC_4N and bc-BC_4N proposed recently, confirming that o-BC_4N is a potential superhard material.     

Structural transition, dielectric and bonding properties of BeCN2

By means of first principle total energy calculations, this paper studies the structural transition, elastic, mechanical, dielectric and electronic properties of BeCN₂. The calculations in total energy indicate that under ambient condition, the orthorhombic BeSiN₂-type BeCN₂ (space group Pna2₁) is a more favoured structure than the tetragonal chalcopyrite-type one (space group I-42d). The results of elastic properties reveal that BeCN₂ in both orthorhombic and tetragonal structure has higher bulk and shear moduli and smaller Poisson's ratio. The calculated Vicker hardness of tetragonal phase is 36.8 GPa, indicating a hard material. The analyses of electronic structure and electron density difference demonstrate that these excellent mechanical properties are attributed to the stronger covalent-bonding of CN₄ and BeN₄ subunits in BeCN₂ crystal. Also, the orthorhombic BeCN₂ phase is found to be a transparent semiconductor material with the calculated direct band gap of about 5.56 eV, superior to the indirect band gap of diamond and c-BN. Moreover, it also calculates Born effective charges and dielectric constants of BeCN₂. These results suggest that BeCN₂ may have some useful applications as optoelectronic, optical window and wear resistant materials.     

固态二氧化碳电子结构及性能的理论研究

采用基于赝势平面波理论的第一性原理计算方法,研究了9种结构的固态二氧化碳的结构和性质.经过结构的几何优化,得到α石英稳定结构晶格常数与他人的计算值基本一致.通过对平衡态能量的分析,我们得出β方石英(cristobalite)结构是能量最低的结构.这与文献的研究结果一致.对弹性性质的计算结果表明,除了超石英(stishovite)和立方黄铁矿(cubic-pyrite)结构之外,其他的结构都是弹性稳定的.利用基于Mulliken轨道重叠布居数的共价固体本征硬度计算方法,预测了各个结构的本征硬度值.结果表明, 关键词： 第一性原理计算 固态二氧化碳 电子结构 硬度