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提出了一种新的基于三层阶跃折射率光纤的微扰模型,分析长周期光纤光栅(Long Period Fiber Grating,LPFG)薄膜传感器,并从β2稳定性定理出发推导出适用于薄膜传感器的微扰公式.该模型不仅能够清晰反映薄膜参量与包层模传播常量变化量之间的关系,而且在计算量和计算难度远低于四层波导模型情况下获得与严格求解结果相当的计算准确度.考虑数值计算本身引入的计算误差,该模型能够满足定性和半定量理论分析需要.最后通过长周期光纤光栅液态水膜的挥发实验对该模型进行了初步验证. 相似文献
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper,InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied.The short-circuit density,fill factor and open-circuit voltage (V oc) of the device are 0.7 mA/cm 2,0.40 and 2.22 V,respectively.The results exhibit a significant enhancement of V oc compared with those of InGaN-based hetero and homojunction cells.This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V oc of an In-rich In x Ga 1 x N solar cell.The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm).The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well. 相似文献
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Lateral Schottky barrier diodes (SBDs) on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2. 相似文献
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