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ZnO nanospheres are synthesized by a two-step self-assembly method. X-ray diffraction pattern and Raman scattering spectra measurements show that all the samples present a typical wurtzite structure. A regular sphere shape is inspected by field emission scanning electron microscope and transmission electron microscope for the samples. It is shown that the as-synthesized ZnO nanosphere is composed of numbers of primary particles with size of around 1Ohm. A possible growth mechanism for the two-step self-assembly ZnO nanosphere is proposed. After applying the ZnO nanospheres to dye-sensitized solar cells (DSSCs), a 117% increase of the overall light to electricity conversion efficiency η is observed compared with that of the ZnO nanopartieles based DSSCs. Associated with the UV-vis results, light scattering is assigned to the great improvement of η. 相似文献
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黑磷是一种具有高的载流子迁移率、高的通断比,带隙为0.3~2 eV的二维材料,对中红外、近红外新型光电器件的开发具有十分重要的意义.本文利用高能球磨法和化学气相转移法成功将红磷转化为黑磷,并进行液相剥离,得到了一层或两层的磷烯.利用X射线衍射仪、透射电子显微镜、差示扫描量热仪对其微观结构和稳定性进行了研究,并表征了化学气相转移法制备黑磷的电学性能.结果表明:高能球磨法制备的黑磷尺寸小、结晶度低,样品中有红磷存在,稳定性差.化学气相转移法制备的黑磷尺寸大、结晶度好、纯度高,且较为稳定.此方法制备的黑磷可成为剥离磷烯的优异原料,进而应用于先进微电子器件. 相似文献
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Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe_2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3 × 104 A·W~(-1) at 550 nm. The electron–hole pairs are excited in a few-layered MoSe2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe_2, which creates a photogating effect. 相似文献
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二维过渡金属硫族化合物(two-dimensional transition metal dichalcogenides,TMDs)具有厚度在原子级别、禁带宽度随层数在1~2 eV内变化、高载流子迁移率(如MoS2载流子迁移率达到了200 cm2·V-1·s-1)等特点,在光学、电学等领域具有广泛应用。TMDs的超薄特性使此类材料与块体材料相比,更容易受到缺陷调控的影响,改变材料原有性能。在本综述中,首先介绍了TMDs的晶体结构和相结构,并根据维度特征对缺陷的类型进行了分类;接着从缺陷的抑制和修复,以及缺陷的制造两方面出发,总结了缺陷调控TMDs材料性能的最新研究进展;在此基础上,介绍了缺陷工程在电学、光学、磁学、电催化等领域的具体应用;最后,本综述讨论了缺陷工程在应用过程中面临的实际问题,并对其未来的研究及发展方向进行了展望。 相似文献
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