排序方式: 共有17条查询结果,搜索用时 15 毫秒
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使用近红外光谱分析方法测量培养后的胚胎培养液,结合偏最小二乘判别分析对胚胎发育潜能进行评价,鉴别具有妊娠能力与不具妊娠能力的胚胎。为了提高模型的判别能力,消除无信息变量对模型稳定性影响,分别采用基于蒙特卡罗的无信息变量消除法(MC-UVE)、竞争性自适应加权抽样法(CARS)与基于变量稳定性的竞争性自适应加权抽样法(SCARS),对光谱进行波长选择。结果表明,与采用全谱74%的正判率相比较,采用这3种波长选择方法,模型独立检验集的正判率分别提高至74.24%,77.12%与80.10%,建模使用变量数降至50以内。比较发现,SCARS的模型优化能力和稳定性均好于MC-UVE和CARS方法。采用近红外光谱结合化学计量学方法预测胚胎的发育潜能是可行的。 相似文献
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气相色谱-质谱法测定动物组织中三种1,2-二苯乙烯类药物的残留量 总被引:7,自引:0,他引:7
建立了动物组织中己烯雌酚(DES)、己二烯雌酚(DIS)和己烷雌酚(HS)残留量的气相色谱-质谱分析方法。动物组织样品在碱性条件下用乙酸乙酯提取,经碳酸钠溶液液-液分配净化,再用硅胶柱固相萃取净化,洗脱液均分成两份后经氮气吹干,分别用双三甲基硅基三氟乙酰氨(BSTFA)和七氟丁酸酐(HFBA)衍生,采用选择离子监测模式(SIM)进行测定,外标法定量。检出限为0.30 μg/kg(cis-DES),0.10 μg/kg(trans-DES和HS)和0.15 μg/kg(DIS)。在0.5~4.0 μg/kg添加水平,回收率为73.0%~86.5%,相对标准偏差(RSD)为1.0%~7.2%。衍生物的峰面积与样品浓度在10~1000 μg/L(DES和DIS) 和5~500 μg/L(HS)范围内呈良好的线性关系,线性回归系数大于0.99。 相似文献
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Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12° and 32°, respectively. 相似文献
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假设A是一个Young函数,MD#为广义sharp极大函数.本文首先引进了LA-Hrmander条件,对于满足LA-Hrmander条件的算子T,得到了与T相关的广义sharp极大函数的估计.然后,再利用该估计得到了算子T的加权Lp范数被Hardy-Littlewood极大函数和与Aˉ相关的极大函数的加权Lp范数所控制(0
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建立了动物组织中沙丁胺醇残留量固相萃取-气相色谱-质谱分析方法。动物组织样品经过葡萄糖醛甙酶酶解后调节pH至9.5,然后用异丙醇/乙酸乙酯混合溶剂液液分配去除杂质,旋转浓缩后用乙酸铵缓冲溶液溶解经SCX固相萃取(SPE)柱净化,洗脱液经氮气吹干后用双三甲基硅基三氟乙酰氨(BSTFA)衍生,采用选择离子模式(86、350、369、440)进行测定,外标法定量。检出限为0.10μg/kg。在添加浓度0.5~5.0μg/kg范围内,平均添加回收率在66.4%~82.4%,相对标准偏差(批内)(CV)在3.5%~5.9%之间;批间(CV)在2.2%~4.8%之间。衍生物的峰面积与样品浓度在0.002~0.50mg/L范围内呈良好的线性关系,线性回归系数大于0.999。 相似文献
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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 下载免费PDF全文
We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The roomtemperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well (MQW), respectively. 相似文献
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A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction. 相似文献