首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   7篇
  免费   30篇
  国内免费   6篇
化学   4篇
物理学   39篇
  2011年   2篇
  2010年   1篇
  2008年   5篇
  2007年   1篇
  2006年   2篇
  2005年   1篇
  2004年   3篇
  2003年   1篇
  2001年   1篇
  2000年   2篇
  1999年   1篇
  1998年   2篇
  1997年   1篇
  1996年   3篇
  1995年   6篇
  1994年   4篇
  1993年   1篇
  1992年   3篇
  1991年   1篇
  1990年   1篇
  1986年   1篇
排序方式: 共有43条查询结果,搜索用时 15 毫秒
1.
We investigate the distribution of the entanglement of the one-dimensional single-hole Hubbard model (HM) and study the relationship between the entanglement and quantum phase transition in the model. The von Neumann entropy of a block with neighbouring spins L for a single-hole HM is calculated using the densitymatrix renormalization group. The distributions of the entanglement entropy in the ground state, as a function of block length, show a dramatic effect, i.e. effectively decoupling with the centres, no matter how the Coulomb interaction u 〉0 or u 〈0. Contrarily, for the Coulomb interaction u = 0 or close to zero, the entanglement entropy in the single-hole model reaches a saturation value for a certain block size. For a fixed size L = 40, the ground state entanglement entropy measure, as a function of u1 shows a peak corresponding to the critical quantum phase transition.  相似文献   
2.
方忠  刘祖黎  姚凯伦  李再光 《物理学报》1994,43(11):1866-1870
对准一维有机铁磁体poly-BIPO体系的磁性机理进行了研究。详细考虑了该体系中的电子跳跃、电子关联及派尔斯不稳定性,自洽地计算了其能带结构和自旋密度分布,并数值地研究了各因素对系统特性的影响。结果发现该体系基态为稳定的铁磁态. 关键词:  相似文献   
3.
柠檬酸根对纳米Fe3O4颗粒的生长及性能的影响   总被引:19,自引:0,他引:19  
现代诊断学的发展使得超小超顺磁性的Fe3O4粒子在医学领域具有重要应用价值。实验中利用某些羧酸盐对铁氧化物晶粒成长的抑制作用,在共沉淀法中引入柠檬酸根,制备出平均粒径小于5 nm的Fe3O4纳米分散体系。研究了不同柠檬酸根浓度对生成粒子的大小、结晶和表面吸附情况的影响。对Fe3O4颗粒在不同条件下的磁性与胶体稳定性进行了讨论。  相似文献   
4.
在用静电探针诊断了轴流式射频等离子体激活化学汽相沉积(PCVD)反应器中等离子体电子温度、电子密度轴向分布的基础上,提出与主要工艺参数相联系的二元流体动力学模型。以等离子体参量的轴向分布和变化规律为中介量,从动力学的角度分析主要工艺参数影响PCVD沉积质量分布的规律。将模型用于沉积SnO2薄膜的过程,理论计算与实验结果符合较好。 关键词:  相似文献   
5.
采用化学共沉淀法制备锰锌铁氧体磁性颗粒并进行了表征,用X射线荧光光谱仪(XRF)、X射线衍射(XRD)测试分析了颗粒组成、结构、平均粒径,表明制备的样品为锰锌铁氧体纳米粒子,平均粒径约为17nm.用振动样品磁强计(VSM)测量了颗粒的磁滞回线和热磁特性.  相似文献   
6.
A simulation of the growth of an obliquely deposited thin film in a three-dimensional lattice was made using kinetic Monte Carlo method. Cu growth in three dimensions on a (001) substrate with high deposition rates has been simulated in this model. We mainly investigated the variation of three-dimensional morphology and microstructure offilms with incidence angle of sputtered flux. The relation of roughness and densities of films with incidence angle was also investigated. The simulation results show that the surface roughness increases and the relative density of thin film decreases with increasing incidence angle, respectively; the columnar structures were separated by void regions for large incidence angle and high deposition rate. The simulation results are in good agreement with experimental results.However, the orientation angle of columns is not completely consistent with the classical tangent rule.  相似文献   
7.
刘大明  刘祖黎 《物理》1992,21(1):52-54,37
本文简述了准分子激光的发展历史、原理、现状及展望,介绍了准分子激光在染料激光、光谱学、光刻、薄膜沉积、表面处理、精密机械加工及医学领域的几种主要应用.  相似文献   
8.
Atomic simulations using embedded atom method (EAM) are performed for Cu (100) nanobelts to study the structural and mechanical behaviour. Cu (100) nanobelts are along[001] taken as the z-axis and have a rectangular cross section in the x - y plane, with [100] and [010] taken as x and y axes. The periodic boundary is used along the z-axis to simulate an infinitely long nanobelt, and other surfaces are free. The simulations are carried out under the mechanical loading with an elongation strain rate of 8.0×10^8 s^-1 along the z-axis. The results show that the nanobelt undergoes a transition from the initial structure with a (100) axis and {100} lateral surfaces to a new structure with the (112) as the z-axis and the lateral surfaces are {111} and {110} respectively, instead of the original {100} surfaces. The mechanism of the structural transition is ascribed to the dislocation propagation through the nanobelt under the external stresses.  相似文献   
9.
We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3-V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3-V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors.  相似文献   
10.
A hydrated tetra-carboxylato-bridged dinuclear copper(Ⅱ) complex [Cu2(mEP)2(H2O)2]2 (1) (mEp is mono -ethyl phthalate or 1,2-benzenedicarboxylate monoethyl ester) has been prepared and characterized by X-ray diffraction single crystal structure analysis and magnetic measurements. This dinuclear complex adopts dimeric paddle-wheel cage structure and the coordination model around each copper(Ⅱ) atom is square-pyramidal with four oxygen atoms of the carboxylate groups from four different mono-ethyl phthalate ligands and one oxygen atom of water as apical position. The magnetic data for 1 exhibited strong intramolecular antiferromagnetic interaction between the two paramagnetic metal ions with 2J=-315.18 cm-1. Comparing with other related complexes in structure and magnetic propertity, the main factor which determines the strong antiferromagnetic interaction in the dimeric copper(Ⅱ) carboxylates is the electronic structure of the bridging O-C-O moiety. CCDC: 624561.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号