High sensitivity Hall devices with AlSb/InAs quantum well structures

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

簇合物C03(CO)7(μ3-S) [μ,η2-CNP(S)(C6H4OCH3)OC(Ph)CH]和Co3(CO)7(μ3-S) [μ,η2-SCNC(CH3)2P(S)(Cl)N(Ph)]的合成与晶体结构

用Co2(CO)8分别与两个杂环配体C(S)NHP(S) (C6H4OCH3)OC(Ph)CH (L1)和C(S)NHC(CH3)2P(S) (CI)N(Ph) (L2)反应.合成两个新的三核钴羰基硫簇合物Co3(CO)7(μ3-S) [μ,η2-CNP(S) (C6H4OCH3)OC(Ph)CH] (Ⅰ)和Co3(CO)7(μ3-S) [μ,η2-SCNC(CH3)2P(S) (CI) N(Ph)] (Ⅱ).用元素分析,IR,1H NMR,31P NMR 及 MS谱表征了它们的结构,同时用X射线衍射法测定了它们的晶体分子结构,二者属于三斜晶系,P1空间群,I的晶胞参数为:a=0.84768(1)nm,b=1.19049(3)nm,c=1.43639(1)nm,α=86.926(1)°,β=81.60l(3)°,γ=88.535(2)°,V=1.4318(5)nm3,Z=2,Dc=1.641g@em-3,F(000)=716,μ=1.893mm-1,R=0.0602,Rw=0.1515.Ⅱ的晶胞参数为:a=1.2050(2)nm,b=1.2448(2)nm,c=0.8951(2)nm,α=97.49(1)°,β=93.552(4)°,γ=108.432(3)°,V=1.2554(3)nm3,Z=2,Dc=1.84lg@cm-3,F(000)=690,μ=2.419mm-1,R=0.0423,Rw=0.1075.Ⅰ和Ⅱ的分子骨架Co3S为三角锥构型,S作为面桥基配体,所有C0作为端基配体与三个Co原子成键.I中含有CoCoCN四元环组件,Ⅱ中含有CoCoSCN五元环组件.     

不同邻菲洛琳衍生物作为中性配体的三元铕配合物电致发光性质研究

合成了三个可真空蒸镀成膜的三元铕配合物Eu(DBM)3LN (DBM为二苯甲酰甲烷阴离子, LN代表不同邻菲洛琳衍生物), 并对其电致发光性质进行了研究. 在配合物Eu(DBM)₃L3 {L3 = 2-苯基-3-[3-(咔唑-9)丙基]咪唑[4, 5-f]1, 10-邻菲洛琳}中, 引入邻菲洛琳和咔唑基团以期分别提高材料的电子和空穴传输性能. 研究结果表明, 对中性配体的有效修饰能够改善材料的热稳定性、载流子传输性和光致发光性质, 从而显著提高其电致发光性能. 双层器件ITO/TPD(40 nm)/Eu(DBM)3L3(80 nm)/Mg:Ag (200 nm)/Ag(100 nm)能够发出铕配合物的特征荧光, 启动电压为8 V, 最大亮度达561 cd/m² (16 V). 四层器件ITO/TPD(50 nm)/[Eu(DBM) ₃L3(5 nm)︰BCP(5nm)] ₄/BCP(20 nm)/AlQ(10 nm)Mg_0.9Ag_0.1 (110 nm)/Ag(100 nm)的最大亮度达1419 cd/m² (18 V), 也为铕配合物的特征发射.     

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m2, the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.     

簇合物Co3(CO)7(μ3-S)[μ,η2-CNP(S)(C6H4OCH3)OC(Ph)CH]和Co3(CO)7(μ3-S)[μ,η2-SCNC(CH3)2P(S)(Cl)N(Ph)]的合成与晶体结构

用Co₂(CO)₈分别与两个杂环配体C(S)NHP(S)(C₆H₄OCH₃)OC(Ph)CH (L₁)和C(S)NHC(CH₃)₂P(S)(Cl)N(Ph) (L₂)反应,合成两个新的三核钴羰基硫簇合物Co₃(CO)₇(μ₃-S)[μ,η²-CNP(S)(C₆H₄OCH₃)OC(Ph)CH](Ⅰ)和Co₃(CO)₇(μ₃-S)[μ,η²-SCNC(CH₃)₂P(S)(Cl)N(Ph)](Ⅱ)。用元素分析,IR, ¹H NMR, ³¹P NMR及MS谱表征了它们的结构,同时用X射线衍射法测定了它们的晶体分子结构,二者属于三斜晶系,空间群P1,Ⅰ的晶胞参数为:a=0.84768(1)nm,b=1.19049(3)nm,c=1.43639(1)nm,α=86.926(1)°,β=81.601(3)°,γ=88.535(2)°,V=1.4318(5)nm³,Z=2,D_c=1.641g·cm^-3,F(000)=716,μ=1.893mm^-1,R=0.0602,R_w=0.1515。Ⅱ的晶胞参数为:a=1.2050(2)nm,b=1.2448(2)nm,c=0.8951(2)nm,α=97.49(1)°,β=93.552(4)°,γ=108.432(3)°,V=1.2554(3)nm³,Z=2,D_c=1.841g·cm^-3,F(000)=690,μ=2.419mm^-1,R=0.0423,R_w=0.1075。Ⅰ和Ⅱ的分子骨架Co3S为三角锥构型,S作为面桥基配体,所有CO作为端基配体与三个Co原子成键。Ⅰ中含有CoCoCN四元环组件,Ⅱ中含有CoCoSCN五元环组件。     

有机电致发光器件的瞬态电响应特性

详细研究了有机发光二极管(OLED)在脉冲电压下的瞬态电流响应特性.瞬态响应电流由3部分组成:正向电流峰(IP)、稳态电流(IS)及反向电流峰(IN).研究发现IS为器件工作时通过器件的电流,而IN与IP则分别对应OLED器件电极/有机界面附近的空间电荷的形成及消失过程.IN、IP与脉冲电压成线性关系,阳极的费米能级与空穴传输材料的HOMO能级差导致IN大于IP.利用不同占空比的双脉冲电压研究了电流与空间电荷的关系,发现空间电荷的充分放电临界占空比只受界面接触的影响,而与器件内部结构无关.     

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-（100） substrates

We investigate the formations of wurtzite （WZ） SiC nano polytypes in zinc blende （ZB） SiC nanofilms hetero-grown on Si-（100） substrates via low pressure chemical vapor deposition （LPCVD） by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes （WZ ＋ ZB） and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.     

~1H-NMR谱表征聚异戊二烯和聚间戊二烯及异戊二烯间戊二烯共聚物的微观结构

利用400 MHz高分辨率核磁共振氢谱,首先对聚异戊二烯橡胶和聚间戊二烯橡胶的微观结构分别进行分析,进而对异戊二烯-间戊二烯共聚物的微观结构进行了研究,建立了聚异戊二烯、聚间戊二烯以及异戊二烯间戊二烯共聚物微观结构的核磁共振氢谱分析方法。