沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

V2O5-WO3/TiO2催化剂氨法SCR脱硝反应动力学研究

In this work, a kinetic study of the selective catalytic reduction of NO with NH3 has been carried out. After proving the operating condition that the effect of intraphase diffusion and interphase mass-transfer processes can be ignored, the selective catalytic reduction of NO with NH3 on the catalytic activity of V2O5-WO3/TiO2 has been carried out with fixing the feed gas flow rate and composition （ NO, NH3, O2 ） while varying the catalyst loading. Based on the experimental results of NO removal efficiency, the empirical catalytic reaction rate equation of NO with NH3 has been obtained using differential analysis. The experimental result is further proved by the graphic integral method at the temperature from 320℃to 400 ℃ The reaction order is 1 to NO and zero to NH3. The reaction follows the Eley-Rideal mechanism model.