How One can Repair Non-integrable Kahan Discretizations. II. A Planar System with Invariant Curves of Degree 6

Mathematical Physics, Analysis and Geometry - In this paper, we develop the dressing method to study the modified Camassa-Holm equation with the help of reciprocal transformation and the associated...     

On Inequalities with Measures of Sobolev Type Embedding Theorems on Open Sets of the Real Axis

We consider some Sobolev-type spaces and obtain a necessary and sufficient condition for their embedding in a Lebesgue space.     

Temperature and junction-type dependency of Andreev reflection in MgB2

We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB₂ junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB₂ samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/k_BT_c=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit).     

The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

High-Power CO2 Laser System with Repetition Rate Operation for High Current Multicharged Heavy Ion Generations

Experimental and numerical calculation results devoted to development of an optical system for an ion source based on a repetition rate CO₂ laser are described. The laser chain consists of a master oscillator, gas absorber cells, and a four-pass amplifier. The optical system provides smooth laser pulses with variable duration and high spatial quality that ensures efficiency for plasma heating and ion generation. The parameters of the plasma ion component measured in the CERN laboratory are applied for a lead target illumination.     

Some Aspects of the Implementation of Scaling Quantum Mechanical Molecular Force Fields

Some features of software implementation of the Pulay scaling procedure are considered. The advantages of the single value decomposition method for maintaining well-conditionality of the scale factor determination problem are demonstrated. The necessity of using a rational number of scale factors is shown. The possibility of obtaining transferable scale factors with the Pulay method and thus predict the vibrational spectra of related compounds is emphasized.     

Reaction of D2 with palladium fulleride C60Pd4.9

Fullerene deuteride was obtained by the reaction of deuterium with solid palladium fulleride C₆₀Pd_4.9 under fairly mild conditions. The compound was identified by FD-MS, UV-Vis and IR spectroscopies, and TLC.Translated from Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 483–484, February, 1996