Phase-controlled all-optical switching based on coherent population oscillation in a two-level system

We theoretically propose a scheme of phase-controlled all-optical switching due to the effect of degenerate four-wave mixing (FWM) and coherent population oscillation (CPO) in a two-level system driven by a strong coupling field and two weak symmetrically detuned fields. The results show that the phase of the FWM field can be utilized to switch between constructive and destructive interference, which can lead to the transmission or attenuation of the probe field and thus switch the field on or off. We also find the intensity of the coupling field and the propagation distance have great influence on the performance of the switching. In our scheme, due to the quick response in semiconductor systems, a fast all-optical switching can be realized at low light level.     

辐照下背栅偏置对部分耗尽型绝缘层上硅器件背栅效应影响及机理分析

基于部分耗尽型绝缘层上硅（SOI）器件的能带结构,从电荷堆积机理的电场因素入手,为改善辐照条件下背栅Si/SiO₂界面的电场分布,将半导体金属氧化物（MOS）器件和平板电容模型相结合,建立了背栅偏置模型.为验证模型,利用合金烧结法将背栅引出加负偏置,对NMOS和PMOS进行辐照试验,得出:NMOS背栅接负压,可消除背栅效应对器件性能的影响,改善器件的前栅I-V特性;而PMOS背栅接负压,则会使器件的前栅I-V性能恶化.因此,在利用背栅偏置技术改善SOI/NMOS器件性能的同时,也需要考虑背栅偏置对PMOS的影响,折中选取偏置电压.该研究结果为辐照条件下部分耗尽型SOI/MOS器件背栅效应的改善提供了设计加固方案,也为宇航级集成电路设计和制造提供了理论支持.