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2.
Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBrMA=CH3NH3^+perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility. 相似文献
3.
Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed. 相似文献
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5.
This article concerns the existence of global smooth solution for scalar conservation laws with degenerate viscosity in 2-dimensional space. The analysis is based on successive approximation and maximum principle. 相似文献
6.
BaZrxTi1-xO3·yLa2O3固溶体的合成、结构与性能 总被引:4,自引:0,他引:4
在100℃以下用软化学合成方法制备了一系列BaZrxTi1-xO3·yLa2O3O(0≤x≤0.3,0≤y≤0.04)固溶体纳米粉末.XRD物相分析及d-间隔-组成图证明,产品为完全互溶取代固溶体.从TEM谱图观察,粒子为均匀球形,平均粒径60nm.通过制陶实验对该系列固溶体的介电特性进行了测试,结果表明,采用化学掺杂方法在BaTiO3中掺入适量锆和镧后,样品的室温介电常数可提高20倍. 相似文献
7.
于铂电极上修饰一层N-(3-二茂铁乙酰胺基)丙基吡咯聚合物膜,应用循环伏安法对聚合物的电化学性能进行研究,发现了N-位取代吡咯聚合物的电活性大大降低,聚合物中 二茂铁基团氧化还原性能稳定,制成酶电极后,在+0.2V以葡萄糖有一明显的催化峰,而对抗坏血酸,尿酸则几乎没有呼应,该葡萄糖电极性能稳定,连续工作十天,响应值基本不变。 相似文献
8.
具有超大通道结构的介孔氧化硅柱层状钛酸的合成和催化应用初探 总被引:6,自引:0,他引:6
A mesoporous (d=2.3mm) silica-pillared layered tetratitanate with a super gallery (d001=1.84mm)was prepared by first preswelling layered tetratitanate with n-dodecyl amine, then reacting with 20wt% NH2(CH2)3Si(OC2H5)3 aqueous solution, and finally calcinating the resultant solid product in air at 550℃. All the reaction was carried out hydrothermally in an autoclave at 130℃. The obtained material has a relatively high BET surface area of 204m2·g-1 and a thermal stability beyond 600℃. The catalytic application of the material was also investigated by using the dehydration of isopropanol and the reform of n-hexane as two probing reactions. 相似文献
9.
端羟基芳香酯二醇扩链的聚氨酯-酯的DSC研究陈静,余学海,杨昌正(南京化工学院应化系南京210009)(南京大学化学系南京210093)关键词嵌段聚醚聚氨酯-酯,结晶性,微观相结构,差示扫描量热法,形态结构众所周知,聚氨酯嵌段共聚物是一类结构特殊、用... 相似文献
10.