Defect calculations with quasiparticle correction: A revisited study of iodine defects in CH3NH3PbI3

Defect levels in semiconductor band gaps play a crucial role in functionalized semiconductors for practical applications in optoelectronics;however,first-principle defect calculations based on exchange-correlation functionals,such as local density approximation,grand gradient approximation(GGA),and hybrid functionals,either underestimate band gaps or misplace defect levels.In this study,we revisited iodine defects in CH₃NH₃PbI₃ by combining the accuracy of total energy calculations of GGA and single-electron level calculation of the GW method.The combined approach predicted neutral Im_i to be unstable and the transition level of Im_i(+1/-1)to be close to the valence band maximum.Therefore,Im_i may not be as detrimental as previously reported.Moreover,Vm I may be unstable in the-1 charged state but could still be detrimental owing to the deep transition level of Vm I(+1/0).These results could facilitate the further understanding of the intrinsic point defect and defect passivation observed in CH₃NH₃PbI₃.     

材料的非简谐性描述符

非简谐效应是诸如软模相变、负热膨胀、多铁性和超低热导率等材料性质的根源.已有的关于量化材料非简谐性的方法没有给出清晰准确的非简谐性描述符,并且计算流程复杂,需要极其耗时的分子动力学模拟.故亟需提出一个可以快速计算的非简谐性描述符,用来理解、评估、设计和筛选具有强非简谐性的功能材料.本研究将晶格非谐性分解为单声子非谐性σ₍(q,j))^A,并提出温度依赖的晶格非谐性的定量描述符A_ph(T).该描述符既可以定量描述从Si,GaAs,CdTe,NaCl到CsPbI₃的晶格非谐性的变化趋势,又可以成功预测非简谐效应驱动的体积模量和晶格热导率性质的变化.本工作提出的非简谐性描述符能够快速量化材料非简谐性,并且可直观地展现材料非简谐效应的声子模态分布.本方法计算简单、高效且有效,可为基于非简谐性筛选与设计材料打下基础.     

卤化钙钛矿太阳能电池的缺陷容忍及缺陷钝化研究进展

缺陷在钙钛矿太阳能电池的快速发展中起着至关重要的作用。缺陷容忍性,即金属卤化钙钛矿的主导缺陷是浅能级缺陷,它们不会成为强非辐射复合中心,这被认为是金属卤化钙钛矿的独特特性,是其具有高光电转换效率的主要原因。然而,要进一步提高金属卤化钙钛矿的光电转换效率,就需要消除一些可作为非辐射复合中心并严重影响器件性能的少量深能级缺陷,包括点缺陷、晶界、表面和界面等。本文综述了缺陷容忍的研究进展,包括软声子模式和极化子效应。此外,还总结了缺陷钝化的策略,包括通过阳离子或阴离子来钝化离子键,以及通过路易斯酸或路易斯碱来钝化配位键等。