一种A da95分布计算的实现模型

在研究 Ａｄａ９５ 分布计算语义的基础上,提出了一个支持 Ａｄａ９５ 的分布计算的实现模型 并讨论了在该环境下实现 Ａｄａ９５ 分布计算所存在的问题和解决方法,以及如何实现非 Ａｄａ９５ 分布计算语义的 Ａｄａ 程序的分布并行计算的问题对于后者,着重讨论了远程会合的实现问题     

Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells

The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multiquantum wells (MQWs) have been investigated by solving the Schrdinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.     

基于知识的多媒体创作模型

通过对传统方法进行分析,引入语义网络的知识表示方法,将面向对象技术与超媒体方法相结合,提出了一个基于知识的多媒体创作模型（ＫＡＭ）,给出了ＫＡＭ模型的形式化定义,并对该模型的结构进行了讨论．ＫＡＭ模型具有以下特点：（１）支持结构与内容的分离;（２）支持复合机制;（３）基于语义的导航,有效地避免了在交互性系统中的迷路问题;（４）独立的链服务功能和管理功能,保持系统的开放性、可扩充性     

数据开采中基于用户需求的关联模型

提出一个基于用户需求的关联模型，引入了相关度的概念，给出了启发式查找与相联规则的ＮＥＡ抽取算法，有效的解决数据开采关联模型中查找规则的盲目性和冗余性，并使重要的信息不被丢失．     

Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

AlN epilayers are grown directly on sapphire(0001)substrates each of which has a low temperature AlN nucleation layer.The effects of pretreatments of sapphire substrates,including exposures to NH3/H2and to H2only ambients at different temperatures,before the growth of AlN epilayers is investigated.In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H2only ambient,and are characterized by six 60°-apart peaks with splits in each peak in(10ˉ12)phi scan and two sets of hexagonal diffraction patterns taken along the[0001]zone axis in electron diffraction.These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2ambient.AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2ambient are Al-polar.Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers.We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire.