Effect of Showerhead Configuration on Coherent Raman Spectroscopically Monitored Pulsed Radio Frequency Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films

The effect of showerhead design, number of holes and geometry, in a parallel plate reactor was studied by measuring the concentration of silane reactant by coherent anti-Stokes Raman scattering (CARS) spectroscopy as a function of radio frequency (rf) pulse width and peak power during pulsed power plasma enhanced chemical vapor deposition (PECVD) of silicon nitride thin films. Film deposition rate, stress, SiH/NH ratio, and thickness and index of refraction homogeneity were correlated with the change in silane concentration for each of the three head geometries: radial, square, and asymmetrical. The asymmetrical head caused plasma quality problems which affected the films' qualities. The square pattern showed good mixing qualities, but produced a film with high compressive stress. The radial head provided the most homogenous film, with respect to index of refraction and film thickness. With a 10 ms pulse width, however, the radial head plasma acted as a continuous plasma for depletion and stress data. The showerhead geometry affects plasma qualities, like stability and intensity, and reactant gas velocities, which in turn affect the nitride film thickness, nitride composition, and stress.