复数运算的金钥匙——“模”

2017年版普通高中数学课程标准对复数版块做了局部调整,增加了复数三角表示.2021年全国新高考统一考试适应性训练和2020届高考数学全国卷(Ⅱ)(理科)对复数深度考查了与“模”有关的运算,本案例举几例复数求模问题,感受“模”在复数运算中的重要地位.     

F—析取ω —语言

关于ω—语言的讨论,基本上者是从文法与自动机的角度([1],[2],[3]).但近年来,许多人从代数学的角度来研究ω—语言的特性([4],[5]).本文从语言的句法么半群出发.作为[5]中讨论的析取ω—语言的拓广,定义了 f—析取ω—语言,讨论了这类语言的若干特性.     

用高温超导模拟研制磁场高均匀度回旋管

磁场高均匀度的低温超导磁体系统已经取得了广泛的应用，在许多领域发挥着重要的作用。随着低温技术和超导技术的发展，用高温超导材料制作高均匀度的超导磁体成为可能。因此，我们用高温超导材料模拟制作了磁场高均匀度回旋管。     

超高压高精度激光状态方程实验测量

材料高压下的状态方程（EOS）在天体物理、材料科学和惯性约束聚变（ICF）等研究领域中都是十分重要的。2004年在“神光”-Ⅱ装置上进行了单路倍频激光直接驱动的Al-Cu阻抗匹配靶实验和Cu-Al阻抗反匹配实验，目的是提高冲击波速度的测量精度和准确性，同时校验测量方法的实用性和可靠性。     

两个回归函数相等的Bootstrap检验

两个回归参数相等性检验一直是统计界感兴趣的问题之一．在这篇文章中，四个检验统计量被用于度量两曲线的差异，在原假设下统计量的分布采用向量数据的重复抽样来逼近，并给出了—些模拟结果．     

Dynamical Properties of Potassium Ion Channels with a Hierarchical Model

It is well known that potassium ion channels have higher permeability than K ions, and the permeable rate of a single K ion channel is about 108 ions per second. We develop a hierarchical model of potassium ion channel permeation involving ab initio quantum calculations and Brownian dynamics simulations, which can consistently explain a range of channel dynamics. The results show that the average velocity of K ions, the mean permeable time of K ions and the permeable rate of single channel are about 0.92nm/ns, 4.35ns and 2.30 ×10^8 ions/s, respectively.     

高考预效度的混合估计

用传统的预测效度估计法估计高考预测效度，其估计值往往偏低。为此，本文应用回归分析中混合估计理论提出了高考预测效度的混合估计。这种估计是预测效度的无偏估计，并解决了预测效度估计值偏低的问题。     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.