基于软木脂的高分子材料 Ⅱ.软木脂的功能与应用

软木脂在植物中的主要功能是作为屏蔽物,外在以及内在的许多因素可以引起细胞栓化,有软木脂存在的栓化细胞壁减少了病菌和其它外界恶劣环境对植物的影响。软木脂在根系吸收、膳食纤维、防腐、化妆品等许多方面发挥了重要的作用。文章是《基于软木脂的高分子材料Ⅰ》的续篇,主要综述有关软木脂的功能与应用。     

太阳能聚焦光斑能流密度测量方法评估

为了确定一种新型间接测量太阳能热发电系统聚焦光斑能流密度分布方法的测量误差范围,对其进行了进一步研究。从理论公式出发,分析了该测量方法的误差源;使用球面小定日镜、CCD相机、漫反射板、中性密度滤光片等设备进行了能流密度测量的实验,使用MATLAB软件对实验数据进行处理,得到了漫反射板上聚焦光斑的能流密度分布和总能量;实验时借助全站仪测量并计算了定日镜中心的光线入射角,根据定日镜的面积和反射率、太阳直射辐射值、余弦效率等计算了光斑能量的理论值,并与测量得到的聚焦光斑总能量比较,得出了实验条件下该方法测量光斑总能量以及能流密度的相对误差为3.5%。该测量误差在允许范围内,进一步证实了该能流密度测量方法的正确性和可行性。     

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

The product of the cutoff frequency and breakdown voltage( fT×BVCEO) is an important figure of merit(FOM) to characterize overall performance of heterojunction bipolar transistor(HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator(SOI) Si Ge HBT to simultaneously improve the FOM of fT×BVCEOand thermal stability is presented by using two-dimensional(2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness(TBOX) on fT, BVCEO, and the FOM of fT×BVCEOare presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEOto some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT,BVCEO, and the FOM of fT×BVCEOcan be improved by increasing SOI insulator Si O_2 layer thickness TBOXin SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of Si O_2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEOis improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer into collector region provides an effective method to improve SOI Si Ge HBT overall performance.     

基于软木脂的高分子材料 Ⅰ.软木脂的来源、合成、结构与性能

对近年来软木脂的高分子材料的研究进展进行了综述,涉及软木脂高分子材料的来源、合成、结构及性能等。