Evaluation of education scenarios for acquiring digital competences of secondary school students in Slovenia

Central European Journal of Operations Research - Digital competences are among the most important competences in modern society, with the education system playing a key role in the acquisition of...     

Selective photoconductivity induced in PbTe(Ga) by a local phonon mode

Selective photoconductivity at frequency ω=155 cm⁻ was discovered in PbTe(Ga) narrow-gap semiconductors at liquid-nitrogen temperatures. The corresponding energy is much lower than all characteristic energies of the electronic spectrum of the semiconductor. The effect is attributed to optical excitation of a local vibrational mode of an impurity center leading to delocalization of the electrons. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 5, 342–346 (10 March 1996)     

Effective field and the Bloch-Siegert shift at bichromatic excitation of multiphoton EPR

The dynamics of multiphoton transitions in a two-level spin system excited by transverse microwave and longitudinal RF fields with the frequencies ω_mw and ω_rf, respectively, is analyzed. The effective time-independent Hamiltonian describing the “dressed” spin states of the “spin + bichromatic field” system is obtained by using the Krylov-Bogoliubov-Mitropolsky averaging method. The direct detection of the time behavior of the spin system by the method of nonstationary nutations makes it possible to identify the multiphoton transitions for resonances ω₀ = ω_mw + rω_rf (ω₀ is the central frequency of the EPR line, r = 1, 2), to measure the amplitudes of the effective fields of these transitions, and to determine the features generated by the inhomogeneous broadening of the EPR line. It is shown that the Bloch-Siegert shifts for multiphoton resonances at the inhomogeneous broadening of spectral lines reduce only the nutation amplitude but do not change their frequencies.     

Lasing in the far IR spectral range under femtosecond optical excitation of the InAs semiconductor in a magnetic field

Generation of a coherent electromagnetic radiation in the far IR (THz) spectral range upon excitation of a semiconductor InAs crystal by 70-fs Ti: sapphire laser pulses is studied. The effect of a magnetic field of different orientation on generation in the submillimeter-wavelength range is analyzed. Placing the crystal into the magnetic field of an optimized permanent magnet with a strength of 5 kOe aligned along the surface of the semiconductor increased the power of generated radiation by a factor of six compared with that in the absence of the field. For the average pump-laser output power of 150 mW and repetition rate of 80 MHz, the average power of the THz radiation reached 100 nW. For detection of ultrashort pulses of the THz radiation, we used, for the first time, a highly sensitive uncooled optoacoustic detector, which detected signals with a power lower than 1 nW.     

Dynamic holograms and optical limiting: Asymmetric two-wave interactions

The conditions for obtaining a high efficiency of energy exchange upon two-wave interactions in dynamic holograms are found by analysis and numerical simulation of a system of nonlinear equations. Use of an asymmetric scheme of beam interaction in a medium with two nonlinearities, one of which determines the amplitude and relaxation time of a grating and the other of which provides phase modulation of the interacting beams, is proposed. It is shown that such a scheme in combination with the specific properties of a medium makes it possible to radically reduce the requirements for the nonlinearity of a medium and the intensity of a light flux in limiting systems, as well as to significantly decrease the time of the transition process. As a result, it becomes possible to attain an efficiency of energy transfer higher than 90% and to increase the corresponding attenuation of a high-power beam by almost two orders of magnitude, which is of interest for optical limiting of intense light fluxes.     

Spin and quark states in the probability representation of quantum mechanics

A short review of the general principles of constructing tomograms of spin and quark states is presented.     

Chain decay of low-angle tilt boundaries in nanocrystalline materials

In terms of two-dimensional dislocation-disclination dynamics, a theoretical model is developed to describe the decay of a low-angle tilt boundary in a deformed nanocrystalline material under the action of an externally applied elastic stress and of the elastic field of a neighboring decayed boundary. The critical external stresses are calculated at which the boundary decays and the dislocations making up this boundary either are trapped by the boundary that decayed earlier or break away from both boundaries. The decay of a low-angle tilt boundary is shown to result in a substantial decrease in the critical decay stresses for the neighboring boundaries, which can cause an avalanche-like chain decay of low-angle boundaries yielding high-density ensembles of mobile dislocations capable of carrying substantial plastic deformations and of forming shear bands in deformed nanocrystalline materials.