Low-temperature, solution processing of TiO2 thin films and fabrication of multilayer dielectric optical elements

High-quality TiO₂ thin films have been deposited from aqueous titanium-peroxo solutions via spin coating. The effects of precursor solution pH on the crystallization behavior, morphology, density, and refractive index of the films are reported. From X-ray diffraction measurements, the amorphous as-deposited films are found to crystallize in the anatase phase at 250 °C. Surface and cross-section SEM images reveal that films deposited from an acidic precursor are more uniform and denser than those deposited from a basic precursor. X-ray reflectivity measurements show that films with smooth surfaces and high densities (up to 87% of single-crystal anatase) can be produced at temperatures as low as 300 °C. Measured densities are consistent with high refractive indices at 633 nm of 2.24 and 2.11 for films derived from acidic and basic precursors, respectively. The uniformity and dense nature of the films have allowed fabrication of multilayer dielectric optical elements with thermal processing at only 300 °C. The distributed Bragg reflector with four bilayers exhibits a reflectance of 92% and a stop band width of 150 nm. The optical microcavity has a quality factor of 20. The optical properties of all elements agree well with theoretical models, indicating good optical quality. Use of the precursor chemistry for direct photopatterning of TiO₂ films without a polymer resist is also demonstrated.     

Surface origin of high conductivities in undoped In2O3 thin films

The microscopic cause of conductivity in transparent conducting oxides like ZnO, In{2}O{3}, and SnO{2} is generally considered to be a point defect mechanism in the bulk, involving intrinsic lattice defects, extrinsic dopants, or unintentional impurities like hydrogen. We confirm here that the defect theory for O-vacancies can quantitatively account for the rather moderate conductivity and off-stoichiometry observed in bulk In{2}O{3} samples under high-temperature equilibrium conditions. However, nominally undoped thin-films of In{2}O{3} can exhibit surprisingly high conductivities exceeding by 4-5 orders of magnitude that of bulk samples under identical conditions (temperature and O{2} partial pressure). Employing surface calculations and thickness-dependent Hall measurements, we demonstrate that surface donors rather than bulk defects dominate the conductivity of In{2}O{3} thin films.     

Brief review of emerging photovoltaic absorbers

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Pulsed laser deposition of BiCuOSe thin films

Undoped and 10% Ca-doped BiCuOSe thin films are prepared by pulsed laser deposition without ex-situ processing. The influence of the preparation conditions on structure and properties of Bi_0.9Ca_0.1CuOSe thin films on amorphous silica substrates is studied. The highest achieved concentration and mobility of free holes (3.9×10²⁰ cm⁻³ and 3.5 cm²/Vs) was close to that measured in strongly c-axis oriented samples on SrTiO₃ substrates (4.0×10²⁰ cm⁻³ and 7.5 cm²/Vs). The Bi_0.9Ca_0.1CuOSe films on SrTiO₃ show almost temperature-independent Seebeck coefficient and their resistivity increases with increasing temperature. The Seebeck coefficient of undoped BiCuOSe films on SrTiO₃ increases below 150°K, and the resistivity shows a flat plateau centered at this temperature. Optical measurements suggest that BiCuOSe has an indirect bandgap of 0.8 eV and a strong absorption edge at 1.45 eV. Ab-initio calculations of the electronic band structure, effective masses and optical properties of BiCuOSe are also presented.