Optical properties of Nd-doped InGaAsP epilayers

The optical properties of Nd-doped InGaAsP epilayers grown by liquid phase epitaxy (LPE) have been studied by photoluminescence and Raman scattering. The full width at half maximum (FWHM) of the photoluminescence peak has been found to decrease as the doping amount of Nd element increases. The narrowest value of the FWHM of PL peak is 7.5 meV, which is smaller by about 46% than that of the undoped InGaAsP and better than previous reports on similar composition layers. Using a spatial correlation model, we found that the asymmetric broadening of the lineshape of the Raman signal is not influenced by the Nd doping. We hence conclude that the introduction of the Nd element can greatly reduce the residual impurities of LPE-grown layers, but the Nd element is not incorporated into the epitaxial layers during the purification.     

A resistive-type humidity sensor using composite films prepared from poly(2-acrylamido-2-methylpropane sulfonate) and dispersed organic silicon sol

A composite material of dispersed organic silicon sol and poly(2-acrylamido-2-methylpropane sulfonate) (poly-AMPS) was used to make humidity sensor without protective film or complicated chemical procedures. The organic silicon sol was dispersed well in the poly-AMPS without using dispersion agent. Parameters that may affect the water-resistive but humidity-sensitive characteristic of composite material, the adding amount of organic silicon sol solution and the film of thermal treatment time, were investigated. The microstructure of the material was analyzed, and the humidity sensing and electrical properties of the sensor were measured. The sensor well responded to humidity with a relatively good linearity, though it depended on the applied frequency. The temperature influence between 15 and 35 °C was within −0.17 % relative humidity (RH)/°C in the range of 30–90% RH. The activation energy was maximum around 40% RH. The sensor showed the hysteresis within 5.9%, fast response time, long-term stability (75 days at least) and satisfactory resistance to high humidity atmosphere (97% RH) and chemical environment (20% C₂H₅OH vapor). Analyzing the structure and complex impedance plots of organic silicon sol/poly-AMPS was used to explain improvement in humidity sensing properties in comparison with nano-sized SiO₂ powder/poly-AMPS films.     

A Nonlinear Rupture Theory of Thin Liquid Films with Soluble Surfactant

The effects of soluble surfactant on the dynamic rupture of thin liquid films are investigated. A nonlinear coupling evolution equation is used to simulate the motion of thin liquid films on free surfaces. A generalized Frumkin model is adopted to simulate the adsorption/desorption kinetics of the soluble surfactant between the surface and the bulk phases. Numerical simulation results show that the liquid film system with soluble surfactant is more unstable than that with insoluble surfactant. Moreover, a generalized Frumkin model is substituted for the Langmuir model to predict the instability of liquid film with soluble surfactant. A numerical calculation using the generalized Frumkin model shows that the surfactant solubility increases as the values of parameters of absorption/desorption rate constant (J), activation energy desorption (nu(d)), and bulk diffusion constant (D(1)) increase, which consequently causes the film system to become unstable. The surfactant solubility decreases as the rate of equilibrium (lambda) and interaction among molecules (K) are increased, which therefore stabilizes the film system. On the other hand, an increase of relative surface concentration (the index of a power law), beta(n), will initially result in a decrease of corresponding shear drag force as beta and n increase from 0 to 0.3 and 0.85, respectively. This will enhance the Marangoni effect. However, a further increase of beta and n to greater than 0.3 and 0.85, respectively, will conversely result in an increase of the corresponding shear drag force. This will weaken the Marangoni effect and thus result in a reduction of interfacial stability. Copyright 2000 Academic Press.     

Influence of holmium doping on the optical properties of quaternary InGaAsP epitaxial layers

Photoluminescence and photoconductivity measurements were used to study the influence of Ho doping on the optical properties of InGaAsP layers grown by liquid phase epitaxy (LPE). The full width at half maximum (FWHM) of the photoluminescence peak was found to decrease as the amount of Ho increases. When the amount of Ho is 0.11 wt%, the FWHM has a minimum value of 7.93 meV, about 46% lower than that of the undoped InGaAsP. The absorption tails observed in the photoconductivity were analyzed with the Urbach tail model and the Urbach energies were obtained from the fits. The Urbach energy decreases as the amount of Ho increases, indicating that Ho doping greatly reduces the amount of residual impurities in LPE-grown layers.     

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Heteroepitaxial ZnO epilayers were grown on Si(1 1 1) substrates using a vertical geometry atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) system. The growth temperature was varied from 550 °C to 650 °C in steps of 25 °C. The ZnO growth rate and surface morphology were strong functions of the growth temperature and ranged from ∼0.16 μm/h to 1.36 μm/h. The surface morphology of the ZnO films changed from granular to sharp tips as the growth temperature increased. The effect of buffer thickness was also examined, and was found to have a strong effect on the optical properties of the ZnO. An optimized growth condition for ZnO epilayers was found at 625 °C, producing a FWHM in the room temperature photoluminescence (PL) spectrum of 4.5 nm and a preferred growth orientation along the (0 0 2) direction.Transmission electron microscopy images and selected area diffraction patterns showed excellent crystalline quality of both the buffer and ZnO overlayer. When non-optimized growth temperatures were employed, post-growth annealing was found to greatly enhance the ratio of band-edge to deep level emission.