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1.
Russian Journal of Electrochemistry - The effects of the Y2O3 and Yb2O3 co-doping impurities on the transport characteristics and stabilization of the cubic phase in solid solutions based on...  相似文献   
2.
Zirconia single crystals doped with 2.8, 3.2, 3.7, and 4.0 mol % of Y2O3 have been studied. The phase composition and structure have been studied by X-ray diffraction analysis and transmission electron microscopy. It has been established that all investigated samples has two ZrO2 tetragonal phases with tetragonality c/a = 1.006–1.007 and c/a = 1.014–1.015 independent of the stabilizing impurity content. The former phase is not transformed, whereas the latter is transformed into a monoclinic one. In all cases the samples have a developed twin structure. Twinning hierarchy is observed: there are first-, second-, third-order, etc., twins, each of them containing the next-order twins inside them. Elastic stress relaxation occurs by twinning rather than by generation of dislocations. The stabilizing impurity content affects the structure nonmonotonically; the minimum dimensions of the twin lamellas refer to the Y2O3 concentration of 3.2 mol %.  相似文献   
3.
The controllable annealing of amorphous Ti2NiCu ribbons by a pulsed electric current was developed, and samples with different fractions of crystalline phase were obtained. The samples’ structure was studied using high-resolution electron microscopy. Annealing conditions allowing us to obtain an amorphous nanocrystalline structure with grain sizes of less than 10 nm were determined. Conditions for obtaining samples with the two-wave shape memory effect were found. A prototype micromanipulator was designed and successfully tested.  相似文献   
4.
Journal of Solid State Electrochemistry - Nanocomposite materials, Na3V2(PO4)3/C and Na3V2(PO4)3/C/Ag, were synthesized by a modified Pechini method. Their properties were characterized with the...  相似文献   
5.
Data from investigating the formation of nanoparticles (NPs) on a surface of silicon wafers after zinc ion implantation and thermal annealing are presented. The investigation is conducted by means of trans-mission electron microscopy, electron diffraction analysis, energy dispersive microanalysis, scanning tunneling microscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. It is found that on their surfaces, the implanted samples have only films of amorphous silicon containing implanted zinc, oxygen, and carbon contamination. Thermal treatment in the range of 400–800°C leads to the formation NP with 20–50 nm wide and 10 nm tall on a wafer’s surface, plus a silicon oxide layer about 20 nm thick. NPs are composed of zinc compounds of the ZnO, ZnSiO3, or Zn2SiO4 types. These NPs disappear after annealing at 1000°C.  相似文献   
6.
Technical Physics - Low-energy (E = 30 keV) Ag+ ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 1015 to 1.5 × 1017 ions...  相似文献   
7.
Kinetics and phase transformations are studied for the previously unconsidered decomposition of supersaturated solid solution in magnesium-based alloys Mg–Dy–Sm. The decomposition of solid solution slows when there is an increase in % Dy: % Sm ratio in the alloys. Mg–Sm and Mg–Dy alloys grow harder when Dy and Sm are added to them, respectively. Products of decomposition in ternary Mg–Dy–Sm alloys are the same as in binary alloys Mg–Dy and Mg–Sm but contain combinations of Dy and Sm.  相似文献   
8.
Physics of the Solid State - The effect of heat treatment at 1000°C for 400 h on the thermal conductivity of zirconium dioxide crystals stabilized with scandium oxide...  相似文献   
9.
Spatial distribution of residual elastic strain in the layers of two step-graded metamophic buffers of various designs, grown by molecular beam epitaxy from ternary InxAl1–xAs solutions on GaAs(001) substrates, is obtained using reciprocal space mapping by three-axis X-ray diffractometry and the linear theory of elasticity. The difference in the design of the buffers enabled the formation of a dislocation-free layer with different thickness in each of the heterostructures, which was the main basis of this study. It is shown that, in spite of the different design of graded metamorphic buffers, the nature of strain fields in them is the same, and the residual elastic strains in the final elements of both buffers adjusted for the effect of work hardening subject to the same phenomenological law, which describes the strain relief process in single-layer heterostructures.  相似文献   
10.
Physics of the Solid State - PtCu/C electrocatalysts with bimetallic PtCu nanoparticles were synthesized by successive chemical reduction of Cu2+ and Pt(IV) in a carbon suspension prepared based on...  相似文献   
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