Temperature-dependent Mössbauer and dielectric studies of Mg0.95Mn0.05Fe1.0Ti1.0O4

The effect of tetravalent Ti⁺⁴ substitution in Mg_0.95Mn_0.05Fe₂O₄ on its magnetic and electrical properties has been studied using X-ray diffraction, Mössbauer spectroscopy, isothermal dc magnetization and dielectric measurements. X-ray diffraction studies have shown the structural transformation from cubic to tetragonal with the Ti⁺⁴ substitution. The Mössbauer spectra of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ recorded in the temperature range 20-300 K shows the presence of the magnetic as well as quadrupole interactions. The isothermal hysteresis loop infers that the system exhibits a ferrimagnetic ordering at room temperature. The Zero-field-cooled (ZFC) and field-cooled (FC) magnetization studies support ferrimagnetic ordering of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ at room temperature. Signatures of ferroelectric transition have been observed in the temperature range 200-300 K from dielectric measurements. The observed magnetic and dielectric behaviour indicate that this material exhibits multiferroic behaviour.     

Influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5−xO4 ferrites

Polycrystalline ferrites with general formula Co_0.5Cd_xFe_2.5−xO₄ (0.0?x?0.5) were prepared by sol-gel method. The dielectric properties ε′, ε″, loss tangent tan δ and ac conductivity σ_ac have been studied as a function of frequency, temperature and composition. The experimental results indicate that ε′, ε″, tan δ and σ_ac decrease as the frequency increases; whereas they increase as the temperature increases. These parameters are found to increase by increasing the concentration of Cd content up to x=0.2, after which they start to decrease with further increase in concentration of Cd ion. The dielectric properties and ac conductivity in studied samples have been explained on the basis of space charge polarization according to Maxwell and Wagner's two-layer model and the hoping between adjacent Fe²⁺ and Fe³⁺ as well as the hole hopping between Co³⁺and Co²⁺ ions at B-sites. The values of activation energies E_f for conduction process are determined from Arrhenius plots, and the variations in these activation energies as a function of Cd content are discussed. The complex impedance analysis is used to separate the grain and grain boundary of the system Co_0.5Cd_xFe_2.5−xO₄. The variations of both grain boundary and grain resistances with temperature and composition are evaluated in the frequency range 42 Hz-5 MHz.     

Performance enhancement of UV quantum well light emitting diode through structure optimization

Optical and Quantum Electronics - Arithmetic logic unit (ALU) is the core of any digital processing systems. For creating an all optical ALU one needs basic logic gates such as optical NOT, OR and...     

Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films

We report structural, magnetic and electronic structure study of Mn doped TiO₂ thin films grown using pulsed laser deposition method. The films were characterized using X-ray diffraction (XRD), dc magnetization, X-ray magnetic circular dichroism (XMCD) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements. XRD results indicate that films exhibit single phase nature with rutile structure and exclude the secondary phase related to Mn metal cluster or any oxide phase of Mn. Magnetization studies reveal that both the films (3% and 5% Mn doped TiO₂) exhibit room temperature ferromagnetism and saturation magnetization increases with increase in concentration of Mn doping. The spectral features of XMCD at Mn L_3,2 edge show that Mn²⁺ ions contribute to the ferromagnetism. NEXAFS spectra measured at O K edge show a strong hybridization between Mn, Ti 3d and O 2p orbitals. NEXAFS spectra measured at Mn and Ti L_3,2 edge show that Mn exist in +2 valence state, whereas, Ti is in +4 state in Mn doped TiO₂ films.     

Study of dielectric and ac impedance properties of Ti doped Mn ferrites

We have reported dielectric and ac impedance properties of Ti doped Mn_1+xFe_2−2xO₄ (0x0.5) ferrites prepared by solid-state reaction method, using dielectric and impedance spectroscopy in the frequency range of 42 Hz–5 MHz, between the temperatures (300K–473K). The dielectric constant and dielectric loss (tan δ) decreases with increasing frequency but these parameters increase with increasing temperature. The dielectric loss tangent curves exhibit dielectric relaxation peaks at high frequencies (3.6 kHz–5 MHz), which are attributed to the coincidence of the frequency of charge hopping between the localized charge states and the external field. The dielectric properties have been explained on the basis of space charge polarization according to Maxwell–Wagner’s two-layer model and the hopping of charge between Fe²⁺ and Fe³⁺ as well as between Mn³⁺ and Mn²⁺ ions at B-sites. The complex impedance analysis has been used to separate grain and grain boundary in studied samples. Two semicircles corresponding to grain and grain boundary have been observed at low temperature, while only one semicircle has been seen at high temperatures. The resistance of grain and grain boundary both increase with Ti⁴⁺ doping.     

Electronic structure studies of Mg0.95Mn0.05Fe2−2xTi2xO4 (0x0.8)

The electronic structure of Mg_0.95Mn_0.05Fe_2−2xTi_2xO₄ (0x0.8) compound is investigated using near edge X-ray absorption fine structure, (NEXAFS) spectroscopy measurements, carried out at O K, Fe and Ti L_3,2-edges at room temperature. The O K-edge spectra indicate that the Fe 3d orbitals have been considerably modified and a new spectral feature start dominating in the pre-edge region at higher Ti doping. The Fe 2p NEXAFS spectra exhibit a mixed valent Fe²⁺/Fe³⁺ states apart from the conversion of Fe³⁺ to Fe²⁺ with the substitution of Ti ions. The Ti L_3,2-edge spectra indicate that Ti ions remain unchanged at 4+ state. These variations in the host electronic structure due to Ti substitution are consistent with the dielectric and transport properties of the material.     

Studies on the activation energy from the ac conductivity measurements of rubber ferrite composites containing manganese zinc ferrite

Manganese zinc ferrites (MZF) have resistivities between 0.01 and 10 Ω m. Making composite materials of ferrites with either natural rubber or plastics will modify the electrical properties of ferrites. The moldability and flexibility of these composites find wide use in industrial and other scientific applications. Mixed ferrites belonging to the series Mn_(1−x)Zn_xFe₂O₄ were synthesized for different ‘x’ values in steps of 0.2, and incorporated in natural rubber matrix (RFC). From the dielectric measurements of the ceramic manganese zinc ferrite and rubber ferrite composites, ac conductivity and activation energy were evaluated. A program was developed with the aid of the LabVIEW package to automate the measurements. The ac conductivity of RFC was then correlated with that of the magnetic filler and matrix by a mixture equation which helps to tailor properties of these composites.