Exciton states in In x Ga1−x As/GaAs double quantum wells: Normalized reflection spectra

Il Nuovo Cimento D - Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from...     

Surface states in Si(111)2×1 and Ge(111)2×1 by optical reflectivity

Surface states in Si(111)2×1 and Ge(111)2×1 are detected by the method of the change of external reflectivity, both at energies below and above the gap. Optical transitions at 2.6 eV in Si and at 1.8 eV and 3.1 eV in Ge, as well as the already known transitions below the gap are observed.     

Detection of subwavelength slit-width variation with irradiance measurements in the far field

We demonstrate that, under suitable conditions, subwavelength feature variations of an object can affect the corresponding far-field diffraction pattern in a measurable way. We present an experiment in which width variations of less than 1/100 of the wavelength are measured with a slit whose width is 100 times the wavelength. Integral and differential intensity measurements in the far field are fully consistent with standard diffraction theory even in the subwavelength variation regime. In particular, slit modulations of 6 nm with a wavelength of 670 nm are shown to follow theoretical calculations within the experimental sensitivity of ~10(-5) .     

Optical detection of surface states in GaAs(110) and GaP(110)

We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ～3.1 eV m GaAs(110) and ～3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).     

Novel fluorescent security marker. Part I: morphological and optical properties of 2-amino-6-ethoxy-4-[4-(4-morpholinyl)phenyl]-3,5-pyridinedicarbonitrile nanoparticles

Newly synthesized fluorescent nanoparticles of 2-amino-6-ethoxy-4-[4-(4-morpholinyl)phenyl]-3,5-pyridinedicarbonitrile have been developed and characterized for possible applications as security marker in paper documents. Nanoparticles have been prepared by reprecipitation in water under sonication. The size and the shape of these nanoparticles, characterized by light scattering and atomic force microscopy, have been found to be highly dependent on sonication power. Typical sizes range from tens to hundreds of nanometers. Furthermore, a remarkable increase in the fluorescence yield has been observed as nanoparticles sizes decrease. Finally, all of the above features, together with the striking stability of optical and mechanical properties over the course of months, allow for straightforward applications that rely on strong and stable fluorescence such as marking important or valuable documents.     

Island formation in Ge films on GaAs(1 1 0)

The early stages of GaAs (1 1 0)/Ge heterojunction formation at room temperature have been investigated by Auger spectroscopy. Comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Ge film proceeds by island formation. A uniform overlayer starts to develop only in films thicker than 10 Å. Evidence is also found for As diffusion through the Ge film.