Study of the peak effect phenomenon in single crystals of 2H-NbSe2

The weakly pinned single crystals of the hexagonal 2H-NbSe₂ compound have emerged as prototypes for determining and characterizing the phase boundaries of the possible order-disorder transformations in the vortex matter. We present here a status report based on the ac and dc magnetization measurements of the peak effect phenomenon in three crystals of 2H-NbSe₂, in which the critical current densities vary over two orders of magnitude. We sketch the generic vortex phase diagram of a weakly pinned superconductor, which also utilizes theoretical proposals. We also establish the connection between the metastability effects and pinning.     

A new three-flavor oscillation solution of the solar neutrino deficit in <Emphasis Type="Italic">R</Emphasis>-parity violating supersymmetry

We present a solution of the solar neutrino deficit using three flavors of neutrinos and R-parity non-conserving supersymmetry. In this model, in vacuum, the is massless and unmixed, mass and mixing being restricted to the - sector only, which we choose in consistency with the requirements of the atmospheric neutrino anomaly. The flavor changing and flavor diagonal neutral currents present in the model and the three-flavor picture together produce an energy dependent resonance-induced - mixing in the sun. This mixing plays a key role in the new solution to the solar neutrino problem. The best fit to the solar neutrino rates and spectrum (1258-day SK and 241-day SNO data) requires a mass square difference of eV² in vacuum between the two lightest neutrinos. This solution cannot accommodate a significant day-night effect for solar neutrinos nor CP violation in terrestrial neutrino experiments. Received: 26 December 2001 / Revised version: 16 February 2002 / Published online: 26 July 2002     

Working group report: Collider Physics

This is summary of the activities of the working group on collider physics in the IXth Workshop on High Energy Physics Phenomenology (WHEPP-9) held at the Institute of Physics, Bhubaneswar, India in January 2006. Some of the work subsequently done on these problems by the subgroups formed during the workshop is included in this report.     

Working group report: Neutrino and astroparticle physics

This is the report of neutrino and astroparticle physics working group at WHEPP-7. Discussions and work on CP violation in long baseline neutrino experiments, ultra high energy neutrinos, supernova neutrinos and water Cerenkov detectors are discussed.     

Z decay constraints on supersymmetric particles revisited

The allowed regions in the chargino-gluino mass plane are mapped out using the latestZ decay data from experiments. The determination of these masses in future experiments will uniquely fix the neutralino mass spectrum for a fixedv ₁/v ₂. Since the usual two-fold ambiguity is removed by LEP data for gluino masses upto 200 GeV. Constraints have also been placed on neutralino masses.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.