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1.
We report the observation of giant quantum coherence effects in the localized modes of ionized hydrogen in synthetic fluorite. Infrared free induction decay experiments on the substitutional H- center show dramatic modulations at negative delay times due to interference between multiple vibrational levels. Spectrally resolving the degenerate four wave mixing signal allows unambiguous assignments of the participating vibrational states. The dependence of the signal intensity upon the delay path between the exciting free electron laser pulses can be accounted for in terms of the resonant third order polarization with a common dephasing time for the excited states.  相似文献   
2.
Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying ‘effective’ carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements.  相似文献   
3.
Far-infrared radiation tunable over the range 85–105 cm-1 and at power levels of up to 10 μW has been generated by difference frequency mixing in InSb. The infra-red radiations which are mixed are a 10.6 μm TEA-CO2 laser line and the tunable Stokes radiation produced from it by spin-flip Raman-laser action, again in an InSb sample. It is argued that careful choice of the free-carrier concentrations in the crystals used for (a) the Stokes generation and (b) the mixing, or the application of an electric field across the mixing sample, should considerably improve the far-infrared power levels.  相似文献   
4.
We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τs300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τs is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τs in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that τs varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τs, imply that the Elliott–Yafet model dominates in these materials.  相似文献   
5.

Background  

Growth hormone (GH) plays an incompletely understood role in the development of the central nervous system (CNS). In this study, we use transgenic mice expressing a growth hormone antagonist (GHA) to explore the role of GH in regulating postnatal brain, spinal cord and body growth into adulthood. The GHA transgene encodes a protein that inhibits the binding of GH to its receptor, specifically antagonizing the trophic effects of endogenous GH.  相似文献   
6.
Fusion cross-sections for the 7Li + 12C reaction have been measured at energies above the Coulomb barrier by the direct detection of evaporation residues. The heavy evaporation residues with energies below 3 MeV could not be separated out from the α-particles in the spectrum and hence their contribution was estimated using statistical model calculations. The present work indicates that suppression of fusion cross-sections due to the breakup of 7Li may not be significant for 7Li + 12C reaction at energies around the barrier.  相似文献   
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We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the optical phonon energy at 36 meV. At low temperatures and excitations LO phonon emission is inhibited and acoustic phonon emission dominates; a sharp cross-over exists between the two regimes. Rate equation calculations have been performed for the single well samples with no fitting parameters and these agree well with experiment. The calculations have been extended to coupled quantum wells and we find that by careful tuning of the well widths the LO phonon rate can be tuned by up to an order of magnitude.  相似文献   
10.
    
We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg0.795Cd0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump–probe technique using a free-electron laser. Over the excited carrier density range (5×1016 to 3×1017 cm–3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.  相似文献   
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