Preparation and crystal structure of the La2Ni12P5 and isotypic ternary lanthanoid—Nickel phosphides

The new ternary phosphide La₂Ni₁₂P₅ has been prepared by direct arc melting of the components as pure metals and red phosphorus. The crystal structure has been determined using X-ray single crystal diffraction data. The compound exhibits a new type of crystal structure, P2₁/m with lattice parameters a = 10.911(3), b = 3.696(2), c = 13.174(4) Å, β = 108.02(2)°, V = 505,2(6) ų, Z = 2. Atomic parameters least squares refinement of 116 independent variables (anisotropic approximation for thermal vibrations) employed 1 284 independent I_o(hkl); R_F = 0.0278 and R_W = 0.0287. The crystal structure is characterized by trigonal prismatic arrangement of phosphorus atoms stacking variant of infinite (with phosphorus centered) columns built by metal trigonal prisms ‖ [010]. Two or three such columns are connected through common edges (lanthanum atoms). The compounds RE₂Ni₁₂P₅ (where RE = Ce, Pr, Nd and Eu) display the same with La₂Ni₁₂P₅ crystal structure. Lattice parameters of these compounds have been refined using powder diffraction data.     

Solid-state Al NMR investigation of thermal decomposition of LiAlH4

Solid-state nuclear magnetic resonance is used to study the thermal decomposition of lithium tetrahydroaluminate into metallic aluminum, hydrogen and trilithium hexahydroaluminate. Aluminum sites in LiAlH₄ and Li₃AlH₆ were characterized using static, magic angle spinning (MAS) and multiple-quantum MAS NMR. By applying the in situ NMR method, it has been demonstrated that melting is not a prerequisite for the decomposition of LiAlH₄. Based on the observed data, a decomposition path has been established that is consistent with the concentrations of observed Al species at various stages of the thermally induced reaction.     

Magnetic field and temperature-induced first-order transition in Gd5(Si1.5Ge2.5): a study of the electrical resistance behavior

Magnetic field (0–4 T) and temperature dependencies (4.2–320 K) of the electrical resistance of Gd₅(Si_1.5Ge_2.5), which undergoes a reversible first-order ferromagnetic↔paramagnetic phase transition, have been measured. The electrical resistance of Gd₅(Si_1.5Ge_2.5) indicates that the magnetic phase transition can be induced by both temperature and magnetic field. The temperature dependence of the electrical resistance, R(T), for heating at low temperatures in the zero magnetic field has the usual metallic character, but at a critical temperature of T_cr=216 K the resistance shows a 20% negative discontinuity due to the transition from the low-temperature high-resistance state to the high-temperature low-resistance state. The R(T) dependence for cooling shows a similar but positive 25% discontinuity at 198 K. The isothermal magnetic field dependence of the electrical resistance from 212T224 K indicates the presence of temperature-dependent critical magnetic fields which can reversibly transform the paramagnetic phase into the ferromagnetic phase and vice versa. The critical magnetic fields diagram determined from the isothermal magnetic field dependencies of the electrical resistance of Gd₅(Si_1.5Ge_2.5) shows that the FM↔PM transition in zero magnetic field on cooling and heating occurs at 206 and 213 K, respectively. The full isothermal magnetic filed hysteresis for the FM↔PM transition is 2 T, and the isofield temperature gap between critical magnetic fields is 7 K.     

Microstructure and magnetocaloric effect in cast LaFe11.5Si1.5Bx (x=0.5, 1.0)

Phase formation, structure, and the magnetocaloric effect (MCE) in as-cast LaFe_11.5Si_1.5B_x (x=0.5, 1.0) compounds have been studied. The Curie temperatures, T_C, are ∼211 and 230 K for x=0.5 and 1.0, respectively, which are higher than that of annealed LaFe_11.5Si_1.5 (T_C=183 K), while the maximum magnetic entropy changes at the respective T_C under a magnetic field change of 0-5 T are 7.8 and 5.8 J/(kg K). Wavelength dispersive spectrometry (WDS) analysis shows that only a small fraction of boron atoms is dissolved in the NaZn₁₃-type structure phase, and that the compositions of the as-cast LaFe_11.5Si_1.5B_x (x=0.5, 1.0) alloys are much different from the intended nominal compositions. These as-cast alloys exhibit second-order magnetic phase transitions and low MCEs. However, based on the relative cooling power, the as-cast LaFe_11.5Si_1.5B_x alloys are promising candidates for magnetic refrigerants over a wide temperature range.     

Thermal expansion and magnetostriction in Pr(n+2)(n+1)Nin(n−1)+2Sin(n+1) compounds

Thermal expansion and magnetostriction of members of a homologous series of compounds based on the alloy series Pr_(n+2)(n+1)Ni_n(n−1)+2Si_n(n+1) have been measured. The crystal structures of these compounds are closely interrelated because they form trigonal prismatic columns in which the number of trigonal prisms that form the base of the trigonal columns is determined by the value of n in the chemical formula. Two compositions were investigated, Pr₅Ni₂Si₃ and Pr₁₅Ni₇Si₁₀, corresponding to n=3$n=3$ and n=4,$n=4,$ respectively. The results were analyzed and used to determine the location of magnetic phase transitions by calculating the magnetic contribution to thermal expansion using the Gruneisen–Debye theory. This allowed more precise determination of the magnetic transition temperatures than could be achieved using the total thermal expansion. The results show two phase transitions in each material, one corresponding to the Curie temperature and the other at a lower temperature exhibiting characteristics of a spin reorientation transition.     

"Nanoscale zippers" in Gd5(SixGe(1-x))4: symmetry and chemical influences on the nanoscale zipping action

One critical parameter influencing the structural nature of the phase transitions in magnetocaloric materials Gd5(SixGe(1-x))4 is the Si/Ge ratio (x/1-x), because transition temperatures and structures depend crucially on this value. In this study, single-crystal X-ray diffraction indicates that Si and Ge atoms are neither completely ordered nor randomly mixed among the three crystallographic sites for these elements in these structures. Ge atoms enrich the T sites linking the characteristic slabs in these structures, while Si atoms enrich the T sites within them. Decomposition of the total energy into site and bond energy terms provides a rationale for the observed distribution, which can be explained by symmetry and electronegativity arguments. For any composition in Gd5(SixGe(1-x))4, a structure map is presented that will allow for a rapid assessment of the specific structure type.     

Phase transformation driven by valence electron concentration: tuning interslab bond distances in Gd5GaxGe4-x

X-ray single crystal and powder diffraction studies on the Gd(5)Ga(x)()Ge(4)(-)(x)() system with 0 < or = x < or = 2.2 reveal dependence of interslab T-T dimer distances and crystal structures themselves on valence electron concentration (T is a mixture of Ga and Ge atoms). While the Gd(5)Ga(x)()Ge(4)(-)(x)() phases with 0 < or = x < or = 0.6 and valence electron concentration of 30.4-31 e(-)/formula crystallize with the Sm(5)Ge(4)-type structure, in which all interslab T-T dimers are broken (distances exceeding 3.4 A), the phases with 1 < or = x < or = 2.2 and valence electron concentration of 28.8-30 e-/formula adopt the Pu(5)Rh(4)- or Gd(5)Si(4)-type structures with T-T dimers between the slabs. An orthorhombic Pu(5)Rh(4)-type structure, which is intermediate between the Gd(5)Si(4)- and Sm(5)Ge(4)-type structures, has been identified for the Gd(5)GaGe(3) composition. Tight-binding linear-muffin-tin-orbital calculations show that substitution of three-valent Ga by four-valent Ge leads to larger population of the antibonding states within the dimers and, thus, to dimer stretching and eventually to dimer cleavage.     

Decoupling of the magnetic and structural transformations in Er5Si4

Er5Si4 is a member of the R5(Si(4-x)Gex) family of alloys, where R=rare earth metal. Many of these compounds display a strong coupling between the magnetic and crystal lattices. In the naturally layered R5(Si(4-x)Gex) materials, inter- and intralayer interactions can be controlled by chemical and physical means; thus their physical properties can be tailored within wide limits. The Er5Si4 is unique in that the temperature dependent structural sequence is opposite that of other representatives of this family. The magnetism of Er5Si4 is reflective of its exceptional place within the series.     

On the high-temperature phase transition of Gd5Si2Ge2

The first-order monoclinic-to-orthorhombic (beta-->gamma) phase transition of the giant magnetocaloric material Gd(5)Si(2)Ge(2) was studied using in situ high-temperature single-crystal X-ray diffraction. A special crystal mounting procedure was developed to avoid crystal contamination by oxygen or nitrogen at high temperatures. The elastic beta-->gamma transformation occurs at 300-320 degrees C during heating, and it is reversible during fast and slow heating and slow cooling but irreversible during rapid cooling. Contrary to theoretical predictions, the macroscopic distribution of the Si and Ge atoms remains the same in both the orthorhombic gamma-polymorph and the monoclinic beta-phase. It appears that interstitial impurities may affect stability of both the monoclinic and orthorhombic phases. In the presence of small amounts of air, the beta-->gamma transformation is complete only at 600 degrees C. The interslab voids, which can accommodate impurity atoms, have been located in the structure, and an effect of partially filling these voids with oxygen or nitrogen atoms on the beta-gamma transition is discussed.