Optical constants of lead telluride films in the range 5–11 μm

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 1, pp. 103–107, January, 1991.     

Electrical properties of Si-SiO2 systems after the application of a magnetic field

Weak-signal methods are used to study long-term changes in the electrophysical and photoelectric properties of Si-SiO₂ systems of n- and p-type semiconductors after the action of a steady magnetic field of 10² Oe. It is found that the field electrode can produce regions characterized by the anomalous recombination, migration, and transformation of nonequilibrium charge carriers, leading to a quasi-oscillating change in the recombination activity of the semiconducting system. It is observed that the magnetically induced changes in the system depend on the impurity of composition of the semiconductor. The results obtained are attributed to the decomposition of the growth structures of complexes and subsequent clustering of the decomposition products at elastic stress sinks. Tomsk State Academy of Control Systems and Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 62–66, February, 1997.     

The effect of the counterion composition on the chain restriction in the cationic polymerization of isobutylene

The effects of the nature of halogens in the initiatingtert-butyl halide-aluminum-containing Lewis acid system on the number average molecular weightM _n and the structure of end groups of polyisobutylene macromolecules obtained in the cationic polymerization of isobutylene in hexane at -78 °C were studied. An increase inM _n is observed in the transition from chlorine to bromine and iodine, accompanied by a decrease in the fraction of end C=C groups and an increase in the relative content of C-Hal groups (Hal = Cl, Br, and I). When atoms of different halogens are present in the counterion, more bulky atoms preferentially participate in the formation of the end groups. The results are interpreted within the framework of the principle of hard and soft acids and bases.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1184–1187, May, 1996.     

Cationic polymerization of hydrocarbon monomers induced by complexes of acyl halides with Lewis acids 5. Polymerization of isobutylene in the presence of the complexes of benzoyl chloride with aluminum bromide

Polymerization of isobutylene inn-hexane at -78 °C in the presence of the complex of benzoyl chloride with AIBr₃ (1 : 2) was investigated. The results were compared to those obtained previously for the polymerization of this monomer induced by the complex of acetyl bromide with AlBr₃. Both complexes initiate the polymerization only by acyl cations. The number average molecular weight (M _n ) of the polymer linearly increases as the degree of isobutylene conversion increases. The polymerization restarts after repeated addition of the monomer, andM _n continues to increase linearly. The efficiency of the initiaton by the benzoyl chloride complex does not exceed 6.2 %; the reaction has the second order with respect to the initiator in the case of PhCOCI · A1₂Br₆; and the chain-propagation rate constant is 13.9 L mol^–1 s t. The use of PhCOCI Al₂Br₆ as the initator of the polymerization of isobutylene allows one to prepare macromolecules with very low contents of the terminal C=C double bonds and with narrow molecular weight distributions. Unlike the MeCOBr·AlBr₃ complex, PhCOCl · AlBr₃ does not initiate polymerization of isobutylene.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1175–1179, May, 1996.     

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg_1?xCd_xTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.     

Influence of the convergence of the incident radiation beam on the spectral characteristics of interference coatings

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 4, pp. 606–611, October, 1990.