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Sun Chi-Kuang Huang Yong-Liang Liang Jian-Chin Wang Jiun-Cheng Gan Kian-Giap Kao Fu-Jen Keller Stacia Mack Michael P. Mishra Umesh Denbaars Steven P. 《Optical and Quantum Electronics》2000,32(4-5):619-640
We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n
2, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n
2 and . The distribution of n
2 versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n
2 with a magnitude on the order of several 10–12 cm2/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode. 相似文献
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