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5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities. 相似文献
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Braverman Michael SH.; Stepanov Vladimir D. 《Bulletin London Mathematical Society》1994,26(3):283-287
Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given. 相似文献
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Belz J Cousins RD Diwan MV Eckhause M Ecklund KM Hancock AD Highland VL Hoff C Hoffmann GW Irwin GM Kane JR Kettell SH Klein JR Kuang Y Lang K Martin R May M McDonough J Molzon WR Riley PJ Ritchie JL Schwartz AJ Trandafir A Ware B Welsh RE White SN Witkowski MT Wojcicki SG Worm S 《Physical review letters》1996,76(18):3277-3280
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Arisaka K Auerbach LB Axelrod S Belz J Biery KA Buchholz P Chapman MD Cousins RD Diwan MV Eckhause M Ginkel JF Guss C Hancock AD Heinson AP Highland VL Hoffmann GW Horvath J Irwin GM Joyce D Kaarsberg T Kane JR Kenney CJ Kettell SH Kinnison WW Knibbe P Konigsberg J Kuang Y Lang K Lee DM Margulies J Mathiazhagan C McFarlane WK McKee RJ Melese P Milner EC Molzon WR Ouimette DA Riley PJ Ritchie JL Rubin P Sanders GH Schwartz AJ Sivertz M Slater WE Urheim J Vulcan WF Wagner DL Welsh RE Whyley RJ 《Physical review letters》1993,71(24):3910-3913
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A.SH. Hussein Z. Hassan S.M. Thahab Abu Hassan M.A. Abid C.W. Chin 《Physica B: Condensed Matter》2011,406(6-7):1267-1271
We have studied the structural properties of undoped and Si-doped AlxGa1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the AlxGa1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A1(LO) and E2(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (ΦB) of undoped and Si-doped AlxGa1?xN samples was found to be 0.86 and 0.74 eV, respectively. 相似文献
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Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition
technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark
and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined.
The increase in carrier concentration across the junction due to photo-irradiation has been observed. 相似文献
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One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the
heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation,
metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition
technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction
built-in-potential (V
D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark
and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied. 相似文献