Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon

The strong effect of a magnetic field on the starting stress and mobility of individual dislocations is discovered in silicon grown by the Czochralski method with a high concentration of dissolved oxygen. It is shown that exposure of dislocations preliminarily introduced into the sample to a magnetic field considerably reduces the starting stresses for the motion of these dislocations. The effect is not observed in samples with a low oxygen concentration. It is assumed that the magnetic field induces singlet-triplet transitions in thermally excited states of silicon-oxygen complexes in the dislocation core, thus stimulating a change in the state (atomic configuration) of oxygen already located at dislocations. As a result, the mean binding energy of oxygen with a dislocation decreases.     

Dynamics of kinks on dislocations in SiGe single crystals

The method of intermittent pulse loading is used for obtaining the dependences of the mean free path of individual dislocations in SiGe single crystals with various concentration of Ge (0–5.5 at. %) on the duration of loading pulses and time intervals between them. It is found that these dependences change qualitatively upon an increase in the Ge concentration. It is shown that the motion of dislocations in SiGe crystals under small shear stresses is characterized by a nonlinear drift of kinks and the formation of superkinks. A theory of the motion of dislocations under the action of intermittent pulse loading under the conditions of heterogeneous kink dynamics is developed. Extended quasi-one-dimensional defects repeating the shape of a part of a segment of a moving dislocation are discovered in SiGe crystals containing 0.96 at. % Ge. The mechanism of formation of such defects as the result of the shedding of a part of the impurity atmosphere by a dislocation segment during overcoming of a local obstacle is proposed.     

Asymmetric domain nucleation and unusual magnetization reversal in ultrathin Co films with perpendicular anisotropy

We report unexpected phenomena during magnetization reversal in ultrathin Co films and Co/Pt multilayers with perpendicular anisotropy. Using magneto-optical Kerr microscopy and magnetic force microscopy we have observed asymmetrical nucleation centers where the reversal begins for one direction of the field only and is characterized by an acute asymmetry of domain-wall mobility. We have also observed magnetic domains with a continuously varying average magnetization, which can be explained in terms of the coexistence of three magnetic phases: up, down, and striped.     

Magnetic field dependence of asymmetry in the magnetization reversal of ultrathin Co films and Co/Pt multilayers with perpendicular anisotropy

We studied the magnetization reversal in ultrathin [Co/Pt]_n films (n=1, 2, and 4) using magneto-optical Kerr microscopy. These materials demonstrate unusual asymmetries in the activity of nucleation centers and domain wall motion. It was found that application of very high holding magnetic field prior to magnetization reversal, exceeding some critical value much larger than the apparent saturation field, suppresses the subsequent ‘asymmetric’ nucleation centers, activity. We revealed that the ‘asymmetric’ nucleation centers become active again after subsequent reversal cycles coming from a smaller holding field and studied how the asymmetry returns with the decrease of applied holding field. It was found that in low-coercivity ultrathin Co films, the asymmetry in domain wall velocity decreased sharply with the applied field increase and disappeared when the reversal field is greater than μ₀H=1.5 mT.