Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm²-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

The influence of Na<Superscript>+</Superscript> on the anilinepropylsilica xerogel synthesis by using the fluoride nucleophilic catalyst

Anilinepropylsilica xerogel was obtained by using an appropriate organosilane and tetraethyl orthosilicate as precursor reagents. The gelation was carried out using HF and NaF as catalysts. The presence of Na⁺ (when NaF was used) resulted in a decrease in the final organic content of the materials. This effect was interpreted as an inhibition of the organosilane polycondensation possibly due to the Na⁺ interaction with the SiO^- groups of the hydrolyzed organosilane. The presence of Na⁺ also results in morphological changes in the xerogels.     

A greedy algorithm for multicut and integral multiflow in rooted trees

We present an O(min(Kn,n²)) algorithm to solve the maximum integral multiflow and minimum multicut problems in rooted trees, where K is the number of commodities and n is the number of vertices. These problems are NP-hard in undirected trees but polynomial in directed trees. In the algorithm we propose, we first use a greedy procedure to build the multiflow then we use duality properties to obtain the multicut and prove the optimality.     

Magnetic hysteresis of the magnetoresistance and the critical current density in polycrystalline YBa2Cu3O7−δ–Ag superconductors

A systematic study of the magnetic hysteresis in transport properties of polycrystalline YBa₂Cu₃O_7−δ–Ag compounds has been made based on two kinds of measurements at 77 K and under applied magnetic fields up to 30 mT: critical current density J_c(B_a) and magnetoresistance R(B_a). The R(B_a) curves show a minimum in their decreasing branch occurring at B=B_min which was found to be both the excitation current I_ex and the maximum applied magnetic field B_am dependent. In addition, for a certain value of B_am>5 mT, we have observed that B_min increases with increasing I_ex and reaches a saturation value. The J_c(B_a) curves show a maximum in decreasing applied magnetic fields occurring at B=B_max. We have also found that B_max increases with increasing B_am and reaches a saturation value. The minimum in the R(B_a) and the maximum in J_c(B_a) curves were found to be related to the trapped flux within the grains. All the experimental results are discussed within the context of the flux dynamics and transport mechanisms in these high-T_c materials.