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Zhang Sen Liu Qi Wang Wei Lv Hangbing Zuo Qingyun Wang Yan Li Yingtao Lian Wentai Long Shibing Wang Qin Liu Ming 《Applied Physics A: Materials Science & Processing》2011,105(4):1003-1009
The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different
morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules
based on blends of poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures
of a few micrometers up to 60 μm in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically
reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment,
the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility.
And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum
in the XRD patterns. Corresponding current–voltage curves are measured in quantity and we propose a model to explain the effect
of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing
a viewpoint towards high performance of BHJ solar cells. 相似文献
2.
Shibing Long Qi Liu Hangbing Lv Yingtao Li Yan Wang Sen Zhang Wentai Lian Kangwei Zhang Ming Wang Hongwei Xie Ming Liu 《Applied Physics A: Materials Science & Processing》2011,102(4):915-919
Resistive switching mechanism of zirconium oxide-based resistive random access memory (RRAM) devices composed of Cu-doped ZrO2 film sandwiched between an oxidizable electrode and an inert electrode was investigated. The Ag/ZrO2:Cu/Pt RRAM devices with crosspoint structure fabricated by e-beam evaporation and e-beam lithography show reproducible bipolar resistive switching. The linear I?CV relationship of low resistance state (LRS) and the dependence of LRS resistance (R ON) and reset current (I reset) on the set current compliance (I comp) indicate that the observed resistive switching characteristics of the Ag/ZrO2:Cu/Pt device should be ascribed to the formation and annihilation of localized conductive filaments (CFs). The physical origin of CF was further analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). CFs were directly observed by cross-sectional TEM. According to EDS and elemental mapping analysis, the main chemical composition of CF is determined by Ag atoms, coming from the Ag top electrode. On the basis of these experiments, we propose that the set and reset process of the device stem from the electrochemical reactions in the zirconium oxide under different external electrical stimuli. 相似文献
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The Cu
x
O films grown by plasma oxidation are composed of an insulating CuO layer and a conductive gradient Cu
x
O layer. We found that the surface CuO layer influenced the switching behaviors greatly. Giant improvement of reliable endurance
was achieved after annealing the device in the N2 atmosphere, resulting from the transition of CuO to Cu2O. The possible mechanism for this improvement is attributed to the alleviation of over-programming during forming process.
The result shows that for resistance switching Cu2O is much more preferred than CuO. After further reducing the thickness of Cu2O layer, the forming voltage can be totally eliminated. 相似文献
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