Structural characterization of a pentacene monolayer on an amorphous SiO2 substrate with grazing incidence x-ray diffraction

Grazing incidence X-ray diffraction reveals that a pentacene monolayer, grown on an amorphous SiO2 substrate that is commonly used as a dielectric layer in organic thin film transistors (OTFTs), is crystalline. A preliminary energy-minimized model of the monolayer, based on the GIXD data, reveals that the pentacene molecules adopt a herringbone arrangement with their long axes tilted slightly from the substrate normal. Although this arrangement resembles the general packing features of the (001) layer in single crystals of bulk pentacene, the monolayer lattice parameters and crystal structure differ from those of the bulk. Because carrier transport in pentacene OTFTs is presumed to occur in the semiconductor layers near the dielectric interface, the discovery of a crystalline monolayer structure on amorphous SiO2 has important implications for transport in OTFTs.     

N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes

We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V.s with an on/off current ratio of 10(6). A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.     

Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density

We report the fabrication and extensive characterization of solid polymer electrolyte-gated organic field-effect transistors (PEG-FETs) in which a polyethylene oxide (PEO) film containing a dissolved Li salt is used to modulate the hole conductivity of a polymer semiconductor. The large capacitance (approximately 10 microF/cm2) of the solution-processed polymer electrolyte gate dielectric facilitates polymer semiconductor conductivities on the order of 103 S/cm at low gate voltages (<3 V). In PEG-FETs based on regioregular poly(3-hexylthiophene), gate-induced hole densities were 2 x 10(14) charges/cm2 with mobilities >3 cm2/V.s. PEG-FETs fabricated with gate electrodes either aligned or intentionally nonaligned to the channel exhibited dramatically different electrical behavior when tested in vacuum or in air. Large differences in ionic diffusivity can explain the dominance of either electrostatic charging (in vacuum) or bulk electrochemical doping (in air) as the device operational mechanism. The use of a larger anion in the polymer electrolyte, bis(trifluoromethanesulfonyl)imide (TFSI-), yielded transistors that showed clear current saturation and square law behavior in the output characteristics, which also points to electrostatic (field-effect) charging. In addition, negative transconductances were observed using the PEO/LiTFSI electrolyte for all three polymer semiconductors at gate voltages larger than -3 V. Bias stress measurements performed with PEO/LiTFSI-gated bottom contact PEG-FETs showed that polymer semiconductors can sustain high ON currents for greater than 10 min without large losses in conductance. Collectively, the results indicate that PEG-FETs may serve as useful devices for high-current/low-voltage applications and as testbeds for probing electrical transport in polymer semiconductors at high charge density.     

A pi-stacking terthiophene-based quinodimethane is an n-channel conductor in a thin film transistor

A terthiophene-based quinodimethane, 3',4'-dibutyl-5,5' '-bis(dicyanomethylene)-5,5' '-dihydro-2,2':5',2' '-terthiophene (1) was synthesized and crystallized. Compound 1 has a planar quinoid geometry that is stabilized by dicyanomethylene groups at each end of the molecule. In the crystal each molecule is part of a dimerized face-to-face pi-stack, with intermolecular spacings of 3.47 and 3.63 A, respectively. Cyclic voltammetry showed that 1 could be reversibly reduced and oxidized in methylene chloride solution. Thin film transistors (TFTs) were prepared by vacuum evaporation of 1 onto SiO2(300 nm)/Si substrates, followed by evaporation of Ag source and drain contacts. The doped Si substrate served as the gate electrode. X-ray diffraction and atomic force microscopy indicate the films are polycrystalline, with the long axes of the molecules approximately perpendicular to the substrate. The TFT measurements revealed n-channel conduction in films of 1, with room-temperature electron field effect mobilities as high as 0.005 cm2/Vs. The butyl side chains give 1 appreciable solubility in a range of common solvents, and preliminary TFT results on films cast from chlorobenzene show electron mobility as high as 0.002 cm2/Vs. These results indicate that pi-stacked quinoidal thiophene oligomers are a promising new class of soluble n-channel organic semiconductors.     

A Pedagogical Perspective on Ambipolar FETs

The operation of an ambipolar field‐effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor‐operation regimes and the resulting current–voltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light‐emitting transistor operation, and a correct method to extract electron and hole mobilities from a given current–voltage curve are presented.     

Length-dependent transport in molecular junctions based on SAMs of alkanethiols and alkanedithiols: effect of metal work function and applied bias on tunneling efficiency and contact resistance

Nanoscopic tunnel junctions were formed by contacting Au-, Pt-, or Ag-coated atomic force microscopy (AFM) tips to self-assembled monolayers (SAMs) of alkanethiol or alkanedithiol molecules on polycrystalline Au, Pt, or Ag substrates. Current-voltage traces exhibited sigmoidal behavior and an exponential attenuation with molecular length, characteristic of nonresonant tunneling. The length-dependent decay parameter, beta, was found to be approximately 1.1 per carbon atom (C(-1)) or 0.88 A(-)(1) and was independent of applied bias (over a voltage range of +/-1.5 V) and electrode work function. In contrast, the contact resistance, R(0), extrapolated from resistance versus molecular length plots showed a notable decrease with both applied bias and increasing electrode work function. The doubly bound alkanedithiol junctions were observed to have a contact resistance approximately 1 to 2 orders of magnitude lower than the singly bound alkanethiol junctions. However, both alkanethiol and dithiol junctions exhibited the same length dependence (beta value). The resistance versus length data were also used to calculate transmission values for each type of contact (e.g., Au-S-C, Au/CH(3), etc.) and the transmission per C-C bond (T(C)(-)()(C)).     

Electrolyte gate-controlled Kondo effect in SrTiO3

We report low-temperature, high-field magnetotransport measurements of SrTiO(3) gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO(3) as an admixture of magnetic Ti(3+) ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.     

Vibrational spectroscopy reveals electrostatic and electrochemical doping in organic thin film transistors gated with a polymer electrolyte dielectric

We apply attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy to directly probe active layers in organic thin film transistors (OTFTs). The OTFT studied uses the n-type organic semiconductor N-N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) and a polymer electrolyte gate dielectric made from poly(ethylene oxide) and LiClO4. FTIR spectroscopy of the device shows signatures of anionic PTCDI-C8 species and broad polaron bands when the organic semiconductor layer is doped under positive gate bias (VG). There are two distinctive doping regions: a reversible and electrostatic doping region for VG 2 V. On the basis of intensity loss of vibrational peaks attributed to neutral PTCDI-C8, we obtain a charge carrier density of 2.9 x 10(14)/cm2 at VG=2 V; this charge injection density corresponds to the conversion of slightly more than one monolayer of PTCDI-C8 molecules into anions. At higher gate bias voltage, electrochemical doping involving the intercalation of Li+ into the organic semiconductor film can convert all PTCDI-C8 molecules in a 30-nm film into anionic species. For comparison, when a conventional gate dielectric (polystyrene) is used, the maximum charge carrier density achievable at VG=200 V is approximately 4.5 x 10(13)/cm2, which corresponds to the conversion of 18% of a monolayer of PTCDI-C8 molecules into anions.