Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.     

The Fermi Level Pinning in Semiconductors (Interphase Boundaries,Clusters, and Radiation Modification)

The original results are presented, and the current status of the Fermi level pinning in semiconductors is reviewed for different physical phenomena (interphase boundaries, semiconductor clusters, and radiation modification of semiconductors).     

Stability of the Lipschitz extension property under metric transforms

We show that the linear and nonlinear Lipschitz extension properties of a metric space are not changed when the original metric is replaced by a new metric obtained by composition with an arbitrary concave function. Submitted: January 2001, Revised: February 2001.     

Electric and tensoelectric study of radiation defects in GaAs

The electric and tensoelectric properties are studied for GaAs crystals which have been irradiated by electrons (2.3 Mev) at 300°K with integrated fluxes of up to 2·10¹⁵ –1·10¹⁹ cm^–2. On the basis of the electrical neutrality equation, including seven energy levels (E1–E5, H0, H1) of the radiation defects, the specific resistivity and the strain sensitivity coefficient are quantitatively analyzed as a function of exposure. The pressure coefficients for the E1–E5 levels with respect to the _c ⁶ point are determined to be (0, 9.6, 11.0, 11.6, 11.6)·10^–6 eV/bar, respectively, at 300°K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1986.     

Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions

A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by H⁺ ions at fluxes of up to 1.5·10¹⁶ cm^–2. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton insulation GaAs.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 61–65, October, 1992.     

Spectra of the Gallium Nitride Growth Traps

Russian Physics Journal - The energy spectra of growth traps in the epitaxial layers of undoped and doped gallium nitride grown under various technological conditions are analyzed.