The effect of head-induced interaural time and level differences on speech intelligibility in noise

A study was made of the effect of interaural time delay (ITD) and acoustic headshadow on binaural speech intelligibility in noise. A free-field condition was simulated by presenting recordings, made with a KEMAR manikin in an anechoic room, through earphones. Recordings were made of speech, reproduced in front of the manikin, and of noise, emanating from seven angles in the azimuthal plane, ranging from 0 degree (frontal) to 180 degrees in steps of 30 degrees. From this noise, two signals were derived, one containing only ITD, the other containing only interaural level differences (ILD) due to headshadow. Using this material, speech reception thresholds (SRT) for sentences in noise were determined for a group of normal-hearing subjects. Results show that (1) for noise azimuths between 30 degrees and 150 degrees, the gain due to ITD lies between 3.9 and 5.1 dB, while the gain due to ILD ranges from 3.5 to 7.8 dB, and (2) ILD decreases the effectiveness of binaural unmasking due to ITD (on the average, the threshold shift drops from 4.6 to 2.6 dB). In a second experiment, also conducted with normal-hearing subjects, similar stimuli were used, but now presented monaurally or with an overall 20-dB attenuation in one channel, in order to simulate hearing loss. In addition, SRTs were determined for noise with fixed ITDs, for comparison with the results obtained with head-induced (frequency dependent) ITDs.(ABSTRACT TRUNCATED AT 250 WORDS)     

Isotope ratio monitoring gas chromatography/Mass spectrometry of D/H by high temperature conversion isotope ratio mass spectrometry

Of all the elements, hydrogen has the largest naturally occurring variations in the ratio of its stable isotopes (D/H). It is for this reason that there has been a strong desire to add hydrogen to the list of elements amenable to isotope ratio monitoring gas chromatography/mass spectrometry (irm-GC/MS). In irm-GC/MS the sample is entrained in helium as the carrier gas, which is also ionized and separated in the isotope ratio mass spectrometer (IRMS). Because of the low abundance of deuterium in nature, precise and accurate on-line monitoring of D/H ratios with an IRMS requires that low energy helium ions be kept out of the m/z 3 collector, which requires the use of an energy filter. A clean mass 3 (HD(+.)) signal which is independent of a large helium load in the electron impact ion source is essential in order to reach the sensitivity required for D/H analysis of capillary GC peaks. A new IRMS system, the DELTA(plus)XL(trade mark), has been designed for high precision, high accuracy measurements of transient signals of hydrogen gas. It incorporates a retardation lens integrated into the m/z 3 Faraday cup collector. Following GC separation, the hydrogen bound in organic compounds must be quantitatively converted into H(2) gas prior to analysis in the IRMS. Quantitative conversion is achieved by high temperature conversion (TC) at temperatures >1400 degrees C. Measurements of D/H ratios of individual organic compounds in complicated natural mixtures can now be made to a precision of 2 per thousand (delta notation) or, better, with typical sample amounts of approximately 200 ng per compound. Initial applications have focused on compounds of interest to petroleum research (biomarkers and natural gas components), food and flavor control (vanillin and ethanol), and metabolic studies (fatty acids and steroids). Copyright 1999 John Wiley & Sons, Ltd.     

Extended-ion approximation and pressure shifts inF-band energies

Pressure variation of maximumF-band absorption energies in the halides of lithium, sodium and potassium has been investigated employing the extended-ion approximation for the calculation of theF-electron energy eigenvalues and using values of local compressibility in the neighbourhood of theF-centres which include the effect of vacancy and pressure. The results obtained agree with the experimental results.     

Modeling the microstructural evolution of metallic polycrystalline materials under localization conditions

In general, the shear localization process involves initiation and growth. Initiation is expected to be a stochastic process in material space where anisotropy in the elastic-plastic behavior of single crystals and inter-crystalline interactions serve to form natural perturbations to the material's local stability. A hat-shaped sample geometry was used to study shear localization growth. It is an axi-symmetric sample with an upper “hat” portion and a lower “brim” portion with the shear zone located between the hat and brim. The shear zone length was 870-890 μm with deformation imposed through a Split-Hopkinson Pressure Bar system at maximum top-to-bottom velocity in the range of 8-25 m/s. The deformation behavior of tantalum tophat samples is modeled through direct polycrystal simulations. An embedded Voronoï-tessellated two-dimensional microstructure is used to represent the material within the shear zone of the sample. A thermo-mechanically coupled elasto-viscoplastic single crystal model is presented and used to represent the response of the grains within the aggregate shear zone. In the shoulder regions away from the shear zone where strain levels remain on the order of 0.05, the material is represented by an isotropic J₂ flow theory based upon the elasto-viscoplastic Mechanical Threshold Stress (MTS) model for flow strength. The top surface stress versus displacement results were compared to those of the experiments and over-all the simulated stress magnitude is over-predicted. It is believed that the reason for this is that the simulations are two-dimensional. A region within the numerical shear zone was isolated for statistical examination. The vonMises stress state within this isolated shear zone region suggests an approximate normal distribution with a factor of two difference between the minimum and maximum points in the distribution. The equivalent plastic strain distribution within this same region has values ranging between 0.4 and 1.5 and is not symmetric. Other material state distributions are also given. The crystallographic texture within this isolated shear zone is also compared to the experimental texture and found to match reasonably well considering the simulations are two-dimensional.     

Evaluating the effects of loading parameters on single-crystal slip in tantalum using molecular mechanics

This study is aimed at developing a physics-based crystal plasticity finite element model for body-centred cubic (BCC) metals, through the introduction of atomic-level deformation information from molecular dynamics (MD) investigations of dislocation motion at the onset of plastic flow. In this study, three critical variables governing crystal plasticity mediated by dislocation motion are considered. MD simulations are first performed across a range of finite temperatures up to 600K to quantify the temperature dependence of critical stress required for slip initiation. An important feature of slip in BCC metals is that it is not solely dependent on the Schmid law measure of resolved shear stress, commonly employed in crystal plasticity models. The configuration of a screw dislocation and its subsequent motion is studied under different load orientations to quantify these non-Schmid effects. Finally, the influence of strain rates on thermal activation is studied by inducing higher stresses during activation at higher applied strain rates. Functional dependence of the critical resolved shear stress on temperature, loading orientation and strain rate is determined from the MD simulation results. The functional forms are derived from the thermal activation mechanisms that govern the plastic behaviour and quantification of relevant deformation variables. The resulting physics-based rate-dependent crystal plasticity model is implemented in a crystal plasticity finite element code. Uniaxial simulations reveal orientation-dependent tension–compression asymmetry of yield that more accurately represents single-crystal experimental results than standard models.     

Diagrammatic structure of the general coupled cluster equations

The general formula for the number of diagrammatic terms occurring in the T_n equation within a particular coupled cluster model is derived. Both the antisymmetrized and Goldstone diagrams are considered. In addition to the full coupled cluster equation approximate approaches are discussed, and for each the general formula for the number of terms is given. Analogous expressions are presented for the number of diagrammatic terms contributing to the elements of the transformed Hamiltonian [Hbar] = e^?T He^T .