首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2823篇
  免费   59篇
  国内免费   8篇
化学   1435篇
晶体学   19篇
力学   72篇
数学   304篇
物理学   1060篇
  2019年   20篇
  2016年   36篇
  2015年   39篇
  2014年   53篇
  2013年   65篇
  2012年   97篇
  2011年   116篇
  2010年   48篇
  2009年   50篇
  2008年   120篇
  2007年   101篇
  2006年   119篇
  2005年   126篇
  2004年   88篇
  2003年   67篇
  2002年   64篇
  2001年   63篇
  2000年   46篇
  1999年   32篇
  1998年   30篇
  1997年   39篇
  1996年   63篇
  1995年   60篇
  1994年   57篇
  1993年   68篇
  1992年   41篇
  1991年   24篇
  1990年   30篇
  1989年   36篇
  1988年   33篇
  1987年   30篇
  1986年   36篇
  1985年   24篇
  1984年   31篇
  1983年   26篇
  1982年   27篇
  1981年   23篇
  1980年   29篇
  1979年   20篇
  1978年   25篇
  1976年   19篇
  1975年   30篇
  1974年   20篇
  1973年   20篇
  1971年   19篇
  1969年   19篇
  1968年   49篇
  1967年   117篇
  1966年   110篇
  1965年   71篇
排序方式: 共有2890条查询结果,搜索用时 937 毫秒
1.
We report on the first observation and studies of a weak delocalizing logarithmic temperature dependence of the conductivity, which causes the conductivity of the 2D metal to increase as T decreases down to 16 mK. The prefactor of the logarithmic dependence is found to decrease gradually with density, to vanish at a critical density n c , 2∼2×1012 cm−2, and then to have the opposite sign at n>n c ,2. The second critical density sets the upper limit on the existence region of the 2D metal, whereas the conductivity at the critical point, G c ,2∼120e 2/h, sets an upper (low-temperature) limit on its conductivity. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 497–501 (25 September 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.  相似文献   
2.
In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N2-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002  相似文献   
3.
4.
5.
6.
7.
We study perturbations of the Erdös–Renyi model for which the statistical weight of a graph depends on the abundance of certain geometrical patterns. Using the formal correspondance with an exactly solvable effective model, we show the existence of a percolation transition in the thermodynamical limit and derive perturbatively the expression of the threshold. The free energy and the moments of the degree distribution are also computed perturbatively in that limit and the percolation criterion is compared with the Molloy–Reed criterion.  相似文献   
8.
We consider optimal control problems for systems described by stochastic differential equations with delay. We state conditions for certain classes of such systems under which the stochastic control problems become finite-dimensional. These conditions are illustrated with three applications. First, we solve some linear quadratic problems with delay. Then we find the optimal consumption rate in a financial market with delay. Finally, we solve explicitly a deterministic fluid problem with delay which arises from admission control in ATM communication networks.  相似文献   
9.
10.
When a stretched elastomer is laminated to a flat plastic frame, a complex shape is formed, which is termed a minimum-energy structure. It is shown how self-organized structures can be applied in the development of actuators with complex, out-of-plane actuationmodes. This unusual concept is then demonstrated in the case of dielectric elastomer actuators. Among advantages of this approach are the simplicity in manufacturing, the potential complexity and sophistication of the manufactured structures, and the general benefits of the concept when applied to other electro-mechanically active materials. PACS 46.32.+x; 77.65.-j; 83.80.Va  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号