Uniform bounds under increment conditions

We apply a majorizing measure theorem of Talagrand to obtain uniform bounds for sums of random variables satisfying increment conditions of the type considered in Gál-Koksma Theorems. We give some applications.

     

Pion correlations and resonance effects in \bar{p}p annihilation to 4\pi^0 at rest

We study correlations in the exclusive reaction at rest with complete reconstruction of the kinematics for each event. The inclusive distribution is fairly flat at small invariant mass of the pion pair while a small enhancement in the double differential distribution is observed for small invariant masses of both pion pairs. Dynamical models with resonances in the final state are shown to be consistent with the data while the stochastic HBT mechanism is not supported by the present findings. Received: 26 February 2002 / Revised version: 22 July 2002 / Published online: 30 August 2002     

Almost Sure Convergence and Square Functions of Averages Of Riemann Sums

Under a very moderate assumption on the Fourier coefficients of a periodic function, we show the convergence almost everywhere of the sequence of averages of its associated Riemann sums. The structure of the set of averages is analyzed by proving a spectral regularization type inequality, which allows to control the corresponding Littlewood-Paley square function.     

Nanotechnology in the Chemical Industry – Opportunities and Challenges

The traditional chemical industry has become a largely mature industry with many commodity products based on established technologies. Therefore, new product and market opportunities will more likely come from speciality chemicals, and from new functionalities obtained from new processing technologies as well as new microstructure control methodologies. It is a well-known fact that in addition to its molecular structure, the microstructure of a material is key to determining its properties. Controlling structures at the micro- and nano-levels is therefore essential to new discoveries. For this article, we define nanotechnology as the controlled manipulation of nanomaterials with at least one dimension less than 100nm. Nanotechnology is emerging as one of the principal areas of investigation that is integrating chemistry and materials science, and in some cases integrating these with biology to create new and yet undiscovered properties that can be exploited to gain new market opportunities. In this article market opportunities for nanotechnology will be presented from an industrial perspective covering electronic, biomedical, performance materials, and consumer products. Manufacturing technology challenges will be identified, including operations ranging from particle formation, coating, dispersion, to characterization, modeling, and simulation. Finally, a nanotechnology innovation roadmap is proposed wherein the interplay between the development of nanoscale building blocks, product design, process design, and value chain integration is identified. A suggestion is made for an R&D model combining market pull and technology push as a way to quickly exploit the advantages in nanotechnology and translate these into customer benefits.     

Cotangent cohomology of Stanley-Reisner rings

Simplicial complexes X provide commutative rings A(X) via the Stanley- Reisner construction. We calculated the cotangent cohomology, i.e., T¹ and T² of A(X) in terms of X. These modules provide information about the deformation theory of the algebro geometric objects assigned to X.     

A modular integer GCD algorithm

This paper describes the first algorithm to compute the greatest common divisor (GCD) of two n-bit integers using a modular representation for intermediate values U, V and also for the result. It is based on a reduction step, similar to one used in the accelerated algorithm [T. Jebelean, A generalization of the binary GCD algorithm, in: ISSAC '93: International Symposium on Symbolic and Algebraic Computation, Kiev, Ukraine, 1993, pp. 111–116; K. Weber, The accelerated integer GCD algorithm, ACM Trans. Math. Softw. 21 (1995) 111–122] when U and V are close to the same size, that replaces U by (U−bV)/p, where p is one of the prime moduli and b is the unique integer in the interval (−p/2,p/2) such that . When the algorithm is executed on a bit common CRCW PRAM with O(nlognlogloglogn) processors, it takes O(n) time in the worst case. A heuristic model of the average case yields O(n/logn) time on the same number of processors.     

Elektrische Charakterisierung von Hochfrequenz-Niederdruck-Gasentladungen

In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities.