Re-entrant phase behavior for systems with competition between phase separation and self-assembly

In patchy particle systems where there is a competition between the self-assembly of finite clusters and liquid-vapor phase separation, re-entrant phase behavior can be observed, with the system passing from a monomeric vapor phase to a region of liquid-vapor phase coexistence and then to a vapor phase of clusters as the temperature is decreased at constant density. Here, we present a classical statistical mechanical approach to the determination of the complete phase diagram of such a system. We model the system as a van der Waals fluid, but one where the monomers can assemble into monodisperse clusters that have no attractive interactions with any of the other species. The resulting phase diagrams show a clear region of re-entrance. However, for the most physically reasonable parameter values of the model, this behavior is restricted to a certain range of density, with phase separation still persisting at high densities.     

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Influence of the carrier gas on HfCl₄-H₂O and ZrCl₄-H₂O atomic layer processes was investigated. The growth rates of HfO₂ and ZrO₂ decreased with increasing flow rate and pressure of the N₂ carrier gas. Data of real-time quartz crystal microbalance measurements demonstrated that the effect observed was mainly due to influence of carrier gas on surface reactions and the role of overlapping the precursor pulses was negligible. At the same increase of the carrier gas mass flow, the increase of the linear flow rate led to more significant changes of thin-film properties than the increase of the carrier gas pressure did. Thin films with higher density, higher refractive index and, particularly, lower concentration of residual chlorine were obtained at higher carrier gas flow rates. Increase of the carrier gas flow rate also resulted in a higher concentration of a metastable phase in HfO₂ thin films deposited at 300 °C.     

Transmission electron microscopy studies of HfO2 thin films grown by chloride-based atomic layer deposition

Detailed transmission electron microscopy characterization of HfO₂ films deposited on Si(1 0 0) using atomic layer deposition has been carried out. The influence of deposition temperature has been investigated. At 226 °C, a predominantly quasi-amorphous film containing large grains of cubic HfO₂ (a₀ = 5.08 Å) was formed. Grain morphology enabled the nucleation sites to be determined. Hot stage microscopy showed that both the cubic phase and the quasi-amorphous phase were very resistant to thermal modification up to 500 °C. These observations suggest that nucleation sites for the growth of the crystalline cubic phase form at the growing surface of the film, rather homogeneously within the film. The films grown at higher temperatures (300-750 °C) are crystalline and monoclinic. The principal effects of deposition temperature were on: grain size, which coarsens at the highest temperature; roughness with increases at the higher temperatures due to the prismatic faceting, and texture, with texturing being strongest at intermediate temperatures. Detailed interfacial characterization shows that interfacial layers of SiO₂ form at low and high temperatures. However, at intermediate temperatures, interfaces devoid of SiO₂ were formed.     

Effects of precursors on nucleation in atomic layer deposition of HfO2

Atomic layer deposition of hafnium dioxide (HfO₂) on silicon substrates was studied. It was revealed that due to low adsorption probability of HfCl₄ on silicon substrates at higher temperatures (450–600 °C) the growth was non-uniform and markedly hindered in the initial stage of the HfCl₄–H₂O process. In the HfI₄–H₂O and HfI₄–O₂ processes, uniform growth with acceptable rate was obtained from the beginning of deposition. As a result, the HfI₄–H₂O and HfI₄–O₂ processes allowed deposition of smoother, more homogeneous and denser films than the HfCl₄–H₂O process did. The crystal structure developed, however, faster at the beginning of the HfCl₄–H₂O process.     

Effect of pressure on the flow behavior of polybutene

The rheology of submicron thick polymer melt is examined under high normal pressure conditions by a recently developed photobleached‐fluorescence imaging velocimetry technique. In particular, the validity and limitation of Reynold equation solution, which suggests a linear through‐thickness velocity profile, is investigated. Polybutene (PB) is sheared between two surfaces in a point contact. The results presented in this work suggest the existence of a critical pressure below which the through‐thickness velocity profile is close to linear. At higher pressures however, the profile assumes a sigmoidal shape resembling partial plug flow. The departure of the sigmoidal profile from the linear profile increases with pressure, which is indicative of a second‐order phase/glass transition. The nature of the transition is confirmed independently by examining the pressure‐dependent dynamics of PB squeeze films. The critical pressure for flow profile transition varies with molecular weight, which is consistent with the pressure‐induced glass transition of polymer melt. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2014 , 52, 708–715     

Free energy landscapes for homogeneous nucleation of ice for a monatomic water model

We simulate the homogeneous nucleation of ice from supercooled liquid water at 220 K in the isobaric-isothermal ensemble using the MW monatomic water potential. Monte Carlo simulations using umbrella sampling are performed in order to determine the nucleation free energy barrier. We find the Gibbs energy profile to be relatively consistent with that predicted by classical nucleation theory; the free energy barrier to nucleation was determined to be ~18 k(B)T and the critical nucleus comprised ~85 ice particles. Growth from the supercooled liquid gives clusters that are predominantly cubic, whilst starting with a pre-formed subcritical nucleus of cubic or hexagonal ice results in the growth of predominantly that phase of ice only.     

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

Atomic layer deposition of HfO₂ on unmodified graphene from HfCl₄ and H₂O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO₂ was also deposited in a two-step temperature process where the initial growth of about 1 nm at 170°C was continued up to 10–30 nm at 300°C. This process yielded uniform, monoclinic HfO₂ films with RMS roughness of 1.7 nm for 10–12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene, whereas no extra defects were generated. An 11 nm thick HfO₂ film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30–40% far away from it.     

Existence Results for Super-Liouville Equations on the Sphere via Bifurcation Theory

We are concerned with super-Liouville equations on $\mathbb{S}^2$, which have variational structure with a strongly-indefinite functional. We prove the existence of nontrivial solutions by combining the use of Nehari manifolds, balancing conditions and bifurcation theory.     

Non-degeneracy and uniqueness of solutions to singular mean field equations on bounded domains

The aim of this paper is to complete the program initiated in [51], [23] and then carried out by several authors concerning non-degeneracy and uniqueness of solutions to mean field equations. In particular, we consider mean field equations with general singular data on non-smooth domains. The argument is based on the Alexandrov–Bol inequality and on the eigenvalues analysis of linearized singular Liouville-type problems.     

Symmetry and uniqueness of solutions to some Liouville-type equations and systems

We prove symmetry and uniqueness results for three classes of Liouville-type problems arising in geometry and mathematical physics: asymmetric Sinh-Gordon equation, cosmic string equation and Toda system, under certain assumptions on the mass associated to these problems. The argument is in the spirit of the sphere covering inequality which for the first time is used in treating different exponential nonlinearities and systems.