Structural and electronic properties of GaN x As1−x alloys

The structural and electronic properties of cubic GaN _x As_1−x with N-concentration varying between 0.0 and 1.0 with step of 0.25 were investigated using the full potential–linearized augmented plane wave (FP-LAPW) method. We have used the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange and correlation potential. In addition the Engel-Vosko generalized gradient approximation (EVGGA) was used for the band-structure calculations. The structural properties of the binary and ternary alloys were investigated. The electronic band structure, total and partial density of states as well as the electron charge density were determined for both the binary and their related ternary alloys. The energy gap of the alloys decreases when we move from x=0.0 to 0.25; then it increases by a factor of about 1.8 when we move from 0.25 to 0.5, 0.75 and 1.0 using EVGGA. For both LDA and GGA moving from x=0.0 to 0.25 causes the band gap to close, showing the metallic nature of the GaN_0.25As_0.75 alloy. When the composition of N moves through x=0.25, 0.5, 0.75 and 1, the band gap increases.     

Structural phase transition of boron nitride compound

The full-potential band-structure scheme based on the linear combination of overlapping nonorthogonal local-orbital (FPLO) is used. The crystal potential and density are represented as a lattice sum of local overlapping nonspherical contributions. The energetic transitions of BN of zinc-blende and wurtzite structures are calculated using the band structure scheme. The energy gap at ambient pressure is found to be indirect for the two structures. The structural properties of two structures of BN are (obtained from the total energy calculations) and the total density of states are calculated. The phase transition parameter of BN is investigated. The ionicity character of BN has been calculated to test the validity of our recent models. The results are in reasonable agreement with experimental and other theoretical results.     

Calculated optical properties of GaX (X=P,As, Sb) under hydrostatic pressure

The hydrostatic pressure dependence of the principal energy gaps and of the optical properties of GaX (X = P, As and Sb) has been calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) for the exchange and correlation potential is applied. Also, we have used the Engel–Vosko GGA formalism, which optimizes the corresponding potential for band-structure and the optical properties calculations. Structural properties such as equilibrium lattice constants, the bulk modulus, and its pressure derivatives were calculated for GaP, GaAs, and GaSb in the zinc-blende structure (ZB). We have found that the results of the structural properties calculations are in agreement with those of ab initio and experimental data. In general, the pressure dependence of the principal energy gaps is compared to other values. The same is for the pressure coefficient. However, for the same structure, the comparison of our results with those of experimental and theoretical calculations shows good agreement. On the other hand, the effect of the applied pressure is clearly seen in the optical properties especially near the energy transition regions.     

Confirmation of bulk modulus model of III–V compounds under pressure effect using tight-binding method

The electronic band structure for GaAs, GaSb and GaP is studied using semi-empirical tight-binding sp³s* method for tetrahedrally coordinated cubic materials. By means of our empirical model, the structural property of bulk modulus at critical transition pressure is calculated. Also, the GaAs, GaSb and GaP compounds are found to be indirect-gap semiconductors under pressure effect. The noticed behaviour of the bonding character reflects the structural phase transition. These results are in good agreement with experimental and theoretical data.     

Electronic properties of orthorhombic LiGaS<Subscript>2</Subscript> and LiGaSe<Subscript>2</Subscript>

We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS₂ (LGS) and LiGaSe₂ (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) method within a framework of density functional theory. Our calculations show that these crystals have similar band structures. The valence band maximum (VBM) and the conduction band minimum (CBM) are located at Γ, resulting in a direct energy band gap. The VBM is dominated by S/Se-p and Li-p states, while the CBM is dominated by Ga-s, S/Se-p and small contributions of Li-p and Ga-p. From the partial density of states we find that Li-p hybridizes with Li-s below the Fermi energy (E _F), while Li-s/p hybridizes with Ga-p below and above E _F. Also, we note that S/Se-p hybridizes with Ga-s below and above E _F.     

Pressure effect on structural,electronic and thermodynamic investigations of europium filled skutterudite EuFe4Sb12: LDA and LSDA approximations

Numerical calculations based on the full potential muffin-tin orbitals method (FP-LMTO) within the local density approximation (LDA) and the local spin-density approximation (LSDA) to investigate the structural, electronic and thermodynamic properties of filled skutterudite EuFe₄Sb₁₂ are presented. The electronic band structure and density of states profiles prove that this material is a conductor. The present investigation is also extended to the elastic constants, such as the bulk modulus B, anisotropy factor A, shear modulus G, young's modulus E, Poisson's ratio ν, and the B/G ratio with pressure in the range of 0–40 GPa. The sound velocities and Debye temperatures are also predicted from the above constants. The variations of the primitive cell volume, expansion coefficient α, bulk modulus B, heat capacity (C_p and C_v), Debye temperature θ_D, Helmholtz free energy A, Gibbs free energy G, entropy S, and internal energy U with pressure and temperature in the range 0–3000 K are calculated successfully.     

First-principle calculations of structural,electronic and magnetic investigations of Mn2RuGe1-xSnx quaternary Heusler alloys

First-principles calculations were used to calculate the structural, electronic and half-metallic ferromagnetism of Mn₂RuGe_1-xSn_x (x?=?0, 0.25, 0.50, 0.75, 1) Heusler alloys. The Hg₂CuTi-type structure is found to be energetic more than Cu₂MnAl-type structure for both Mn₂RuGe and Mn₂RuSn compounds. The calculated lattice constants for Mn₂RuGe and Mn₂RuSn are 5.91?Å and 6.17?Å, respectively. The electronic band structures and density of states of Mn₂RuGe show a half metallic character with total magnetic moments, 2 μ_B per formula unit that are in good agreement with Slater-Pauling rule with indirect band gap, 0.31?eV along the direction Γ –X. It is observed that the total magnetic moment per cell increases as Sn concentration increases in the Heusler alloys.     

Structural,elastic, electronic,optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr,Ba)

First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae₃AlAs₃ (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.