基于准分形结构的具有二次谐波抑制作用的小型化高温超导滤波器的研究(英文)

为了抑制平面带通滤波器的二次谐波,实现高温超导滤波器的小型化,本文提出了两种新型的准分形结构谐振器,并分别将其应用到微带滤波器的设计与仿真之中.第一种谐振器由希尔伯特分形结构改变而来,由于其相对紧凑度更高,并且保留希尔伯特分形结构的基本性质,因此仿真结果不仅具有更好的二次谐波抑制效果还有更小的体积优势.第二种谐振器由Minkowski分形结构改变而来,基于此谐振器设计了一款八阶带通滤波器,仿真及测试结果表明:基于此谐振器所设计滤波器与传统的微带滤波器相比,二次谐波被推迟了1.5GHz左右,并且体积减小约三分之一.结果证明两种滤波器均具有良好的二次谐波抑制效果和小型化的优势.     

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.     

多层高温超导薄膜研究

文中以LaAlO3为衬底,制作了一层Tl-2212高温超导薄膜,并在薄膜上生长一层较薄的CeO2缓冲层,然后再在上面生长一层Tl-2212高温超导薄膜。经过测量,研究了多层膜结构对超导薄膜临界电流密度的影响。结果显示,在缓冲层的结晶过程中超导薄膜的晶格受到影响,结晶过程中的处理很容易诱导上面一层Tl-2212超导薄膜产生杂相,导致临界电流密度降低。