用横场伊辛模型研究应力对铁电薄膜的热力学性质的影响

用横场伊辛模型研究了铁电薄膜的热力学性质.在体系的哈密顿量中引入一个两维的在平面内的应力，并假设应力从基底材料和薄膜材料之间的界面层到薄膜的表面层是呈指数形式衰减的.结果显示：压应力有利于极化，使居里温度向高温区移动，而张应力对极化和居里温度的影响正好相反.扩散长度对铁电薄膜的热力学性质有很大的影响. 关键词： 铁电薄膜 应力 横场伊辛模型     

Multiferroic phase transitions in manganites RMnO3: A two-orbital double exchange simulation

The semi-quantum two-orbital exchange model is used to investigate the effect of small rare-earth ion substitution on orthorhombic RMnO 3 with A-type antiferromagnetic order,using the Monte Carlo algorithm,exact diagonalization,and zero-temperature optimization approaches.It is revealed that the substitution results in a rich multiferroic phase diagram where the coexisting A-type antiferromagnetic phase and spiral spin phase,pure spiral spin phase,coexisting spiral spin phase,the E-type antiferromagnetic phase,and the pure E-type antiferromagnetic phase emerge in sequence.The multiferroic phase transitions modulate substantially the electric polarization,which is consistent qualitatively with recent experiments.     

Multiferroic phase transitions in manganites RMnO₃:A two-orbital double exchange simulation

The semi-quantum two-orbital exchange model is used to investigate the effect of small rare-earth ion substitution on orthorhombic RMnO 3 with A-type antiferromagnetic order,using the Monte Carlo algorithm,exact diagonalization,and zero-temperature optimization approaches.It is revealed that the substitution results in a rich multiferroic phase diagram where the coexisting A-type antiferromagnetic phase and spiral spin phase,pure spiral spin phase,coexisting spiral spin phase,the E-type antiferromagnetic phase,and the pure E-type antiferromagnetic phase emerge in sequence.The multiferroic phase transitions modulate substantially the electric polarization,which is consistent qualitatively with recent experiments.     

Study of BaxSr1-xTiO3 thin films using transverse-field Ising model

In this paper, the effects of doping on the thermodynamic properties of Ba_xSr_{1-x}TiO_3 (BST) thin film are investigated, based on the transverse-field Ising model (TIM) within the framework of mean field theory. We apply the double-peak distribution model of related parameters to mimic doping. The lattice expansion arising from doping with large Ba^{2+} was also taken into account. We concentrate on the doping concentration dependence of peak temperature (T_m), spontaneous polarization and dielectric susceptibility. It is found that the doping concentration has great influence on the dielectric properties and phase transition properties of BST thin films. We also discuss the quantum effect arising from doping.