Optical Planar Waveguides in KTiOPO4 Crystals by MeV Oxygen Ion Implantation

We report on the optical planar waveguide formation in KTiOPO4 crystals by single or double oxygen ion implantation at energies of 2.4-3.0 MeV and doses of 1015 ions/cm^2. The dark-line spectroscopy properties are investigated by a prism-coupling method. With an effective refractive index method, the refractive index profiles of the waveguides are reconstructed. The program code TRIM＇98 （transport of ions in matter） is used to simulate the implantation process of oxygen ions into the KTiOPO4 crystal. It is found that an inherent relationship exists between the nuclear damage and the refractive index changes induced by the ion-beam implantation.     

Ion－Implanted Waveguides in a Nd^3＋－Doped Silicate Glass

Monomode enhanced-index Nd^3 -doped silicate glass waveguides fabricated by ion implantation are reported.The Nd^3 -doped silicate glass was implanted by 3.0 MeV B^ ions, 3.0 MeV 0^ ions and 4.5 MeV Ni^2 ions,respectively. A prism-coupling method was carried out to measure dark modes in the Nd^3 -doped silicate glassusing a model 2010 prism coupler. The moving fibre method was applied to measure the waveguide propagationloss. After a moderate annealing, the 3.0-MeV B^ -ion implanted waveguide loss is about 3.54 dB/cm; the 3.0-Me V O^ -ion implanted waveguide loss is about 5.36 dB/cm; and the 4.5-MeV the Ni^2 -implanted waveguide lossis about 7.55dB/cm. The results show that with the increasing ion mass, the loss in implanted waveguide isincreased.