Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.     

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

An analysis model of the dV/dt capability for a metal-oxide-semiconductor （MOS） controlled thyristor （MCT） is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping （DVLD） technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.     

Monolithic integration of AlGaN/GaN metal—insulator field-effect transistor with ultra-low voltage-drop diode for self-protection

In this paper, we present a monolithic integration of self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features self-protected function at reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block reverse bias (>70 V/μm) and suppress the leakage current (<5×10^-11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.     

对教科书《 物理·选修3 2》 “ 问题与练习”中 一道题目的质疑

“普通高中课程标准实验教科书《 物理·选修3 2》 ” 第六章“ 传感器” 第3节 实验: 传感器的应用( 第6 4 页)中“ 问题与练习”的第1题, 从学生所学的电路的知识来分析, 这个防盗报警电路起不到报警作用     

退火温度对Zn0.93Fe0.07O薄膜微结构和铁磁性能的影响

用射频磁控溅射方法在硅片上制备了Zn0.93Fe0.07O薄膜,并在空气中用不同温度进行热处理,利用X射线衍射仪和扫描电子显微镜对其微结构、表面和断面形貌进行测试.结果表明,薄膜沿c轴方向择优生长,呈六角纤锌矿结构,空气中450℃退火的样品XRD谱中出现最强的(002)衍射峰,晶粒尺寸变大,薄膜结晶和取向明显变好.用振动样品强磁计对样品铁磁特性进行测试,发现当退火温度的升高时,饱和磁化强度有所增加,并经分析认为这可能是薄膜中晶粒间的晶界缺陷引起的.