基于抛物方程的海陆环境信号时延与到达角估计

针对复杂海陆环境中的无线信号传播预测问题,研究了适用于抛物方程的信号时延与到达角估计方法。将自由空间中抛物方程轴向波前信号视为本地副本信号,然后利用信号的自相关特性,将接收信号与副本信号进行互相关运算,最后通过相关函数的峰值检索,得到脉冲信号在复杂环境中传播的附加时延。采用数值算例,验证了该方法的正确性和有效性。此外,采用多重信号分类算法,由抛物方程构建接收阵列的协方差矩阵,并对其进行特征值分解,然后利用信号子空间和噪声子空间的正交性,实现复杂环境中的信号到达角估计。仿真结果表明,相比于传统的平面波谱方法,该方法具有更高的多径分辨率。基于上述方法,并结合数字地图,在典型的海陆环境中进行了仿真实验,分析了蒸发波导对脉冲信号传播时延和到达角的影响。     

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.     

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.     

新型特效Na离子吸附剂Li1+xAlxTi2-x(PO4)3的光谱研究

采用高温固相法合成了新型特效Na离子吸附剂Li1 xAlxTi2-x(PO4)3.用XRD,FTIR,Raman等手段研究了其结构形态;对材料的激光拉曼光谱和红外光谱进行了研究和指认;并对其吸附性能进行了研究.结果表明少量Al的加入未影响到LiTi2(PO4)3的晶体结构,但使Li1 xAlxTi2-x(PO4)3对Na离子产生了特效吸附作用,可用于高纯锂盐制备过程中微量杂质钠离子的分离.其最佳吸附条件为:当x=0.4时,在pH值为10.0～11.0条件下,Li1 xAlxTi2-x(PO4)3的吸附容量达到11.76 mg·g-1.     

Two-dimensional analysis of the interface state effect on current gain for a 4H-SiC bipolar junction transistor

This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor (BJT).Simulation results indicate the mechanism of current gain degradation,which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current.The experimental results are well-matched with the simulation,which is modeled by exponential distributions of the interface state density replacing the single interface state trap.Furthermore,the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.     

改性硅藻土负载亚铁氰化铜复合物的制备及其对Cs+的吸附性能

采用水热法、以氯化铝为铝源对硅藻土(De)进行改性,通过浸渍法将亚铁氰化铜(KCu HCF)纳米颗粒负载于改性De表面,制备出γ-Al OOH/De-KCu HCF和γ-Al₂O₃/De-KCu HCF两种复合吸附剂,对所制备的吸附剂进行了表征,并研究了其对Cs⁺的吸附性能。结果表明,所制备吸附剂具有优异的Cs⁺吸附性能,γ-Al OOH/De-KCu HCF和γ-Al₂O₃/De-KCu HCF最高吸附容量分别可达75.44、84.02 mg·g^-1,γ-Al₂O₃/De-KCu HCF对模拟卤水中Cs⁺的吸附率高达97.55%;以3 mol·L^-1NH₄NO₃为脱附剂,经3级连续脱附后,γ-Al₂O₃/De-KCu HCF的Cs⁺脱附率...     

Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs

This paper reports that multi-recessed gate 4H-SiC MESFETs (metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal is applied to improve the gate--drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.     

改性硅藻土负载亚铁氰化铜复合物的制备及其对Cs+的吸附性能

采用水热法、以氯化铝为铝源对硅藻土(De)进行改性,通过浸渍法将亚铁氰化铜(KCuHCF)纳米颗粒负载于改性De表面,制备出γ-AlOOH/De-KCuHCF和γ-Al₂O₃/De-KCuHCF两种复合吸附剂,对所制备的吸附剂进行了表征,并研究了其对Cs⁺的吸附性能。结果表明,所制备吸附剂具有优异的Cs⁺吸附性能,γ-AlOOH/De-KCuHCF和γ-Al₂O₃/De-KCuHCF最高吸附容量分别可达75.44、84.02 mg·g^-1,γ-Al₂O₃/De-KCuHCF对模拟卤水中Cs⁺的吸附率高达97.55%;以3 mol·L^-1 NH₄NO₃为脱附剂,经3级连续脱附后,γ-Al₂O₃/De-KCuHCF的Cs⁺脱附率可达81.88%,经过5次吸附-脱附循环后仍保持了较高的吸附量。     

基于柱坐标系抛物方程和矩量法的电波传播混合算法

针对包含近源障碍物条件下的电波传播问题,提出了一种新颖的电波传播预测混合建模方法:矩量法(MOM)和圆柱坐标系抛物方程法(PEM)混合建模方法(MOM-PEM);MOM用于包含辐射源和近源障碍物的小圆柱区域内的电波传播建模,PEM用于MOM计算空间外的大区域范围内电波传播建模。MOM和PEM的计算过渡区域进行精细化网格剖分处理以避免场强数值传递的不兼容。仿真模拟了三类近源障碍物存在场景下的电波传播问题:有限开窗屏障碍物、立方体障碍物以及包含辐射源的半封闭空间障碍物,并将混合算法计算得到的结果和相同环境下采用全矩量法计算得到的结果进行了数值对比,结果表明混合算法和矩量法在精度上吻合较好。     

High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.