ELECTROLUMINESCENCE SPECTRA OF GexSi1-x/Si SINGLE QUANTUM WELL

The electroluminescence of Ge_xSi_1-x/Si single quantum well was measured at temper-atures above room temperature along the growth direction and the direction normal to it. TO and NP peaks were resolved.     

AlyGa1-yAs/AlxGa1-xAs量子阱激光器材料的光致荧光谱

测量了Al_yGa_1-yAs/Al_xGa_1-xAs量子阱激光材料的光致荧光谱.发现在室温连续激光器材料的光致荧光谱中有两个峰,而不能激射的材料中则只有一个很宽的峰.将高能峰归属于准费密能级电子的跃迁. 关键词：     

生物质与煤混燃灰的比电阻特性实验研究

以玉米秸、麦秸、锯末纯燃并以不同比例与煤混燃,利用DR型高压粉尘比电阻实验台对灰样比电阻R进行测量, 以AAS对灰样化学成分进行分析。结果表明,纯生物质燃料灰R值为10⁸Ω·cm~10¹0Ω·cm,属于中比电阻。混燃灰样的R值均为10⁸Ω·cm~10¹2Ω·cm。麦秸与煤的混燃灰中,掺混率R_t对比电阻R的影响不明显;玉米秸与煤的混燃灰中,在110℃以下,R_t越高,R越低;在110℃以上,R_t越高,R越大。生物质与煤的混燃改变了燃料的燃烧特性及熔融特性,使灰的物理特性和化学成分、含量发生变化,造成混燃灰比电阻与煤灰比电阻的规律存在一定的差异。     

GaAs/AlGaAs量子线的制备和光致荧光谱

利用分子束外延材料的化学选择腐蚀和再生长制备出了GaAs/AIGaAs量子线并且测量了77K的光致荧光谱.也得到透射电子显微镜的照片. 关键词：     

AlyGa1—yAs／AlxGa1—xAs量子阱激光器材料的光致荧光谱

测量了ＡｌｙＧａ１－ｙＡｓ／ＡｌｘＧａ１－ｘ量子阱激光材料的光致荧光谱，发现在室温连续激光器材料的光致荧光谱中有两上峰，而不能激射的材料中则只有一个很宽的峰，将高能峰归属于准费密能级电子的跃迁。     

ELECTROLUMINESCENCE SPECTRA OF GexSi1-x/Si SINGLE QUANTUM WELL

The electroluminescence of Ge_xSi_1-x/Si single quantum well was measured at temper-atures above room temperature along the growth direction and the direction normal to it. TO and NP peaks were resolved.