Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3～5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8.     

Fabrication and Characterization of Nanocrystalline VO2 Thin Films

Nanocrystalline VO2 films with phase transition temperature 34℃ have been fabricated on SiaN4-film-coated silicon and quartz substrates by argon-annealing films of metastable VO2(B). The original VO2(B) films are obtained by ion beam sputtering in an argon-oxygen atmosphere at 200℃. The nanocrystalline VO2 films exhibit strong changes in electrical and optical properties when a phase transition is completed. The phase transition temperature in the as-fabricated samples is about 34℃, which is smaller in comparison with 68℃ in the singlecrystalline VO2 material. A lower phase transition temperature is favorable for device applications such as smart window coating and low power consumption optical switching.     

Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｔｈｅｉｎｆｒａｒｅｄｃｈａｒｇｅｃｏｕｐｌｅｄｄｅｖｉｃｅ(ＩＲＣＣＤ )ｓｅｎｓｉｔｉｖｅｆｒｏｍ 3ｔｏ 5μｍｈａｓｎｕｍｅｒｏｕｓａｐｐｌｉｃａｔｉｏｎｓｉｎｂｏｔｈｍｉｌｉｔａｒｙａｎｄｃｉｖｉｌｉｎｄｕｓｔｒｉｅｓ[1] .Ｔｏ ｇｅｔｌａｒｇｅａｒｒａｙＩＲＣＣＤ ,ｒｅｃｅｎｔｔｒｅｎｄｓｉｎＩＲＣＣＤｔｅｃｈｎｏｌｏｇｙａｒｅｔｏｒｅｄｕｃｅｂｏｔｈ ｐｉｘｅｌｓｉｚｅａｎｄｔｈｅａｃｔｉｖｅａｒｅａ .Ｗｈｅｒｅａｓｔｈｅｆｏｒｍｅｒｉｎｃｒｅａｓｅｓａｒｒａ…