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Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation 下载免费PDF全文
Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation (PⅢ) technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed. 相似文献
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AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell 下载免费PDF全文
The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained. 相似文献
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