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Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies 下载免费PDF全文
The controllable growth of three different morphologies of AlN
nanostructures (nanorod, nanotip and nanocrater) arrays are
successfully realized by using chemical vapour deposition (CVD)
technology. All three nanostructures are of single crystal h-AlN
with a growth orientation of [001]. Their growth is attributed to
the vapour-liquid-solid (VLS) mechanism. To investigate the factors
affecting field emission (FE) properties of AlN nanostructures, we
compare their FE behaviours in several aspects. Experimental results
show that AlN nanocrater arrays possess the best FE properties, such
as a threshold field of 7.2~V/μm and an emission current
fluctuation lower than 4%. Moreover, the three AlN nanostructures
all have good field emission properties compared with a number of
other excellent cathode nanomaterials, which suggests that they are
future promising FE nanomaterials. 相似文献
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