Influence of Substrate on the Transportation Properties of Co/Alq3 Granular Films on a Si Wafer

A series of Co0.48 （Alq3）0.52 granular films were deposited on silicon substrates using the co-evaporating technique. A crossover of magnetoresistance （MR） from negative to positive was observed in the samples, due to conducting channel switching. The transport properties of samples are greatly influenced by hydrofluoric acid pretreatment, as a result, positive MR decreases drastically and the temperature dependence of resistance changes a lot near room temperature. The result indicates that the native oxide layer plays an important role in the transport mechanism. Moreover, different resistivities of Si substrates influence the current distribution of conducting channels, leading to different transport behaviors accordingly.     

Transition of Magnetoresistance in Co/Alq3 Granular Film on Silicon Substrate

A Coo.3s （Alq3）o.62 granular film is prepared using a co-evaporating technique on a silicon substrate with a native oxide layer. A crossover of magnetoresistance （MR） from positive to negative is observed. The positive MR ratio reaches 17.5% at room temperature （H = 50kOe）, and the negative MR ratio reaches -1.35% at 1514 （H = 10 kOe）. Furthermore, a metal-insulator transition is also observed. The transition of resistance and MR results from the channel switching of electron transport between the upper Co-AIq3 granular film and the inversion layer underneath. The negative MR originates from the tunneling magnetoresistance effect due to the tunneling conducting between adjacent Co granules, and the positive MR may be attributed to the transport of high mobility carriers in the SiO2/Si inversion layer.