Moir patterns and step edges on few-layer graphene grown on nickel films

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.     

一维石墨烯超晶格上的氢吸附

通过化学气相沉积法在一种典型的高指数面铜(410)-氧上制备出了一维石墨烯超晶格,并利用拉曼光谱(Raman)、低能电子衍射(LEED)、扫描隧道显微术(STM)等方法研究了氢原子在该超晶格上的吸附.实验结果揭示了由于超晶格的调制作用所引起的无缺陷石墨烯区域的选择性吸附,氢原子优先吸附在石墨烯超晶格一维周期中的相同部位.这一发现为进一步通过一维超晶格调控石墨烯的性质提供了更多可能.在石墨烯上的吸附氢原子除了单个或成对存在之外,实验还首次观察到一种新的三氢原子位型.